P-Channel 1.8V Specified PowerTrench MOSFET

General Description This P-Channel 1.8V specified MOSFET uses Fairchild’s advanced low voltage PowerTrench process. It has been optimized for battery power management applications. Features • –2.6 A, –12 V. RDS(ON) = 40 mΩ @ VGS = –4.5 V RDS(ON) = 50 mΩ @ VGS = –2.5 V RDS(ON) = 80 mΩ @ VGS = –

P-Channel 1.8 V (D-S) MOSFET

Features • –2.6 A, –12 V. RDS(ON) = 40 mΩ @ VGS = –4.5 V RDS(ON) = 50 mΩ @ VGS = –2.5 V RDS(ON) = 80 mΩ @ VGS = –1.8 V • Fast switching speed • High performance trench technology for extremely low RDS(ON) • SuperSOTTM -3 provides low RDS(ON) and 30 higher power handling capability than SOT

P-Channel 1.8 V (D-S) MOSFET

General Description This P-Channel 1.8V specified MOSFET uses Fairchild’s advanced low voltage PowerTrench process. It has been optimized for battery power management applications. Applications • Battery management • Load switch • Battery protection Features • –2.6 A, –12 V. RDS(ON)

P-Channel 1.8V Specified PowerTrench® MOSFET

General Description This P-Channel 1.8V specified MOSFET uses Fairchild’s advanced low voltage PowerTrench process. It has been optimized for battery power management applications. Applications • Battery management • Load switch • Battery protection Features • –2.6 A, –12 V. RDS(ON) = 4

低压N沟道增强型场效应管

P-Channel MOSFET

P 沟道，1.8V 指定，PowerTrench® MOSFET，-12V，-2.6A，40mΩ

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