N 沟道，PowerTrench® MOSFET，60V，42A，7.4mΩ

该N沟道MOSFET专为使用同步或传统开关PWM控制器来改进总体效率和在最大程度上减少DC/DC转换器的开关结点振铃而设计。已经针对低栅极电荷、低rDS(on)、快速开关速度和软体二极管反向恢复性能进行了优化。 • Max rDS(on) = 7.4 mΩ at VGS = 10 V, ID = 14 A\n• Max rDS(on) = 10.3 mΩ at VGS = 8 V, ID = 12.5 A\n• Advanced Package and Silicon combination for low rDS(on) and high efficiency\n• Next generation enhanced body diode technology, engineered for soft recovery\n• MSL1 robust package design\n• 100%;

N-Channel PowerTrench짰 MOSFET 60 V, 42 A, 7.4 m廓

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N 沟道，PowerTrench® MOSFET，60V，22A，8.2mΩ

该N沟道MOSFET专为使用同步或传统开关PWM控制器来改进总体效率和在最大程度上减少DC/DC转换器的开关结点振铃而设计。已经针对低栅极电荷、低rDS(on)、快速开关速度和软体二极管反向恢复性能进行了优化。 •VGS = 2 V且ID = 13.5 A时，最大rDS(on) = 8.2 mΩ \n•VGS = 4.5 V且ID = 11.5 A时，最大rDS(on) = 11.7 mΩ \n•先进的封装和硅技术完美融合，实现了低rDS(on)和高效率\n•MSL1耐用封装设计\n•100%经过UIL测试\n•符合RoHS标准;

N-Channel PowerTrench짰 MOSFET 60 V, 22 A, 8.2 m廓

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DUAL COOL??PACKAGE POWERTRENCH짰 MOSFETs

Dual Cool™ packaging technology, provides both bottom- and top-side cooling in a PQFN package. Not only is the PQFN footprint an industry standard, it provides the designer with performance flexibility. With enhanced dual path thermal performance and improved parasitics over its wire-bonded predece

N-Channel Dual CoolTM PowerTrench짰 MOSFET 60 V, 40 A, 6.3 m廓

Dual Cool™ packaging technology, provides both bottom- and top-side cooling in a PQFN package. Not only is the PQFN footprint an industry standard, it provides the designer with performance flexibility. With enhanced dual path thermal performance and improved parasitics over its wire-bonded predece

N-Channel Power Trench짰 MOSFET 60 V, 22 A, 7.9 m廓

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