DUAL COOL??PACKAGE POWERTRENCH짰 MOSFETs

Dual Cool™ packaging technology, provides both bottom- and top-side cooling in a PQFN package. Not only is the PQFN footprint an industry standard, it provides the designer with performance flexibility. With enhanced dual path thermal performance and improved parasitics over its wire-bonded predece

N-Channel Dual CoolTM PowerTrench짰 MOSFET 60 V, 40 A, 6.3 m廓

Dual Cool™ packaging technology, provides both bottom- and top-side cooling in a PQFN package. Not only is the PQFN footprint an industry standard, it provides the designer with performance flexibility. With enhanced dual path thermal performance and improved parasitics over its wire-bonded predece

N 沟道，双 CoolTM 33 PowerTrench® MOSFET，60V，40A，6.3mΩ

此 N 沟道 MOSFET 采用飞兆半导体先进的 PowerTrench®工艺生产。先进的硅技术和 Dual Cool™ 封装技术完美融合，可在提供最小 rDS(on)的同时通过极低的结至环境热阻保持卓越的开关性能。 •Dual Cool™ 顶侧冷却PQFN封装\n•最大值 rDS(on) = 6.3 mΩ（VGS = 10 V, ID = 17 A 时）\n•最大值 rDS(on) = 8.7 mΩ（VGS = 8 V, ID = 14.5 A 时）\n•通态电阻 rDS(on)极低的高性能技术\n•符合 RoHS 标准;

N-Channel Power Trench짰 MOSFET 60 V, 22 A, 7.9 m廓

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N-Channel PowerTrench짰 MOSFET 60 V, 42 A, 7.4 m廓

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N-Channel PowerTrench짰 MOSFET 60 V, 22 A, 8.2 m廓

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