N 沟道，屏蔽门极，PowerTrench® MOSFET，80V，166A，2.7mΩ

MOSFET – Power, Single N-Channel, STD Gate, SO8FL 80 V, 2.1 m, 181 A

Features • Low QRR, Soft Recovery Body Diode • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant Applications • Synchronous Rectification (SR) in DC−DC and AC−DC • Primary

MOSFET - Power, Single N-Channel, STD Gate, SO8FL 80 V, 2.55 m, 156 A

Features • Low QRR, Soft Recovery Body Diode • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant Applications • Synchronous Rectificati