N-Channel Power Trench짰 MOSFET 30V, 18A, 8.0m廓

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N 沟道，Power Trench® MOSFET，30V，18A，8.0mΩ

N-Channel Power Trench짰 MOSFET 30V, 18A, 8.0m

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封装/外壳：模具 包装：卷带（TR） 描述：MOSFET 2N-CH 8MLP 分立半导体产品 晶体管 - FET，MOSFET - 阵列

SILICON 28V HYPERABRUPT VARACTOR DIODES

Description A range of silicon varactor diodes for use in frequency control and filtering. Featuring closely controlled CV characteristics and high Q. Low reverse current ensures very low phase noise performance. Available in single or dual common cathode format in a wide rage of miniature sur

Silicon 25V hyperabrupt varactor diodes

Description A range of silicon varactor diodes for use in frequency control and filtering. Featuring closely controlled CV characteristics and high Q. Low reverse current ensures very low phase noise performance. Available in single or dual common cathode format in a wide rage of miniature surfac

Silicon 25V hyperabrupt varactor diodes

Description A range of silicon varactor diodes for use in frequency control and filtering. Featuring closely controlled CV characteristics and high Q. Low reverse current ensures very low phase noise performance. Available in single or dual common cathode format in a wide rage of miniature surfac

Surface Mount Zener Diodes

Features ● lat Handling Surface for Accurate Placement ● tandard Zener Breakdown Voltage Range -3.3V to 68V ● ow Profile Package

SPRING-LOADED CONNECTORS

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