N-Channel PowerTrench짰 MOSFET 30 V, 20 A, 2.2 m廓

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N 沟道，PowerTrench® MOSFET，30V，20A，2.2mΩ

DUAL COOL??PACKAGE POWERTRENCH짰 MOSFETs

Dual Cool™ packaging technology, provides both bottom- and top-side cooling in a PQFN package. Not only is the PQFN footprint an industry standard, it provides the designer with performance flexibility. With enhanced dual path thermal performance and improved parasitics over its wire-bonded predece

N-Channel Power Trench짰 SyncFET 30 V, 20 A, 2.2 m廓

General Description The FDMC7660S has been designed to minimize losses in power conversion applications. Advancements in both silicon and package technologies have been combined to offer the lowest rDS(on) while maintaining excellent switching performance. This device has the added benefit of an

N-Channel PowerTrench짰 MOSFET 30 V, 20 A, 2.2 m廓

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N 沟道，双 CoolTM 33 PowerTrench® MOSFET，30V，40A，2.2mΩ

N 沟道，Power Trench® SyncFET™，30V，20A，2.2mΩ

InGaAsP STRAINED DC-PBH LASER DIODE MODULE 1 625 nm TELEMETRY APPLICATION

DESCRIPTION The NX7660JC is a 1 625 nm newly developed Strained Multiple Quantum Well (St-MQW) structure laser diode DIP module with single mode fiber and internal thermoelectric cooler. It is designed for light sources of telemetry equipment. FEATURES • Output power Pf = 5 mW MIN. @ IF = 65 mA

1 510 nm OPTICAL FIBER COMMUNICATIONS InGaAsP STRAINED MQW DC-PBH LASER DIODE MODULE

DESCRIPTION The NX8501 Series is a 1 510 nm phase-shifted DFB (Distributed Feed-Back) laser diode with single mode fiber. The Multiple Quantum Well (MQW) structure is adopted to achieve stable dynamic single longitudinal mode operation over wide temperature range of 0 to +65 °C. It is designed

1 480 nm EDFA APPLICATION InGaAsP STRAINED MQW DC-PBH LASER DIODE MODULE

DESCRIPTION The NX7460LE is a 1 480 nm pumping laser diode module with optical isolator for an EDFA (Er Doped optical Fiber Amplifier) that can expand the transmission span and compensate optical losses. It has a strained Multiple Quantum Well (st-MQW) DC-PBH laser diode that features high output

InGaAsP STRAINED DC-PBH LASER DIODE MODULE 1 625 nm TELEMETRY APPLICATION

DESCRIPTION The NX7660JC is a 1 625 nm newly developed Strained Multiple Quantum Well (St-MQW) structure laser diode DIP module with single mode fiber and internal thermoelectric cooler. It is designed for light sources of telemetry equipment. FEATURES • Output power Pf = 5 mW MIN. @ IF = 65 mA

InGaAsP STRAINED DC-PBH LASER DIODE MODULE 1 625 nm TELEMETRY APPLICATION

DESCRIPTION The NX7660JC is a 1 625 nm newly developed Strained Multiple Quantum Well (St-MQW) structure laser diode DIP module with single mode fiber and internal thermoelectric cooler. It is designed for light sources of telemetry equipment. FEATURES • Output power Pf = 5 mW MIN. @ IF = 65 mA