FDG6316P价格
参考价格：￥0.5845
型号：FDG6316P 品牌：FAIRCHILD 备注：这里有FDG6316P多少钱，2026年最近7天走势，今日出价，今日竞价，FDG6316P批发/采购报价，FDG6316P行情走势销售排行榜，FDG6316P报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
FDG6316P | P-Channel 1.8V Specified PowerTrench MOSFET General Description This P-Channel 1.8V specified MOSFET uses Fairchild’s advanced low voltage PowerTrench process. It has been optimized for battery power management applications. Features • –0.7 A, –12 V. RDS(ON) = 270 mΩ @ VGS = –4.5 V RDS(ON) = 360 mΩ @ VGS = –2.5 V RDS(ON) = 650 mΩ @ VGS = | FAIRCHILD 仙童半导体 |   | |
FDG6316P | 丝印代码：.16；P-Channel 1.8V Specified PowerTrench ®MOSFET General Description This P-Channel 1.8V specified MOSFET uses Fairchild’s advanced low voltage PowerTrench process. It has been optimized for battery power management applications. Applications • Battery management • Load switch Features • –0.7 A, –12 V. RDS(ON) = 270 mΩ @ VGS = –4.5 V | ONSEMI 安森美半导体 | | |
FDG6316P | Dual P-Channel 20 V (D-S) MOSFET 文件：1.67492 Mbytes Page：7 Pages | VBSEMI 微碧半导体 | | |
FDG6316P | P - Channel MOSFET | PLINGSEMIC 鹏领半导体 | | |
FDG6316P | P+P 20V MOSFET | MTW | | |
FDG6316P | P-Channel 1.8V Specified PowerTrench MOSFET | XWSEMI 芯微半导体 | | |
P-Channel 1.8V Specified PowerTrench MOSFET General Description This P-Channel 1.8V specified MOSFET uses Fairchild’s advanced low voltage PowerTrench process. It has been optimized for battery power management applications. Features • –0.7 A, –12 V. RDS(ON) = 270 mΩ @ VGS = –4.5 V RDS(ON) = 360 mΩ @ VGS = –2.5 V RDS(ON) = 650 mΩ @ VGS = | FAIRCHILD 仙童半导体 | | ||
HIGH SPEED OPTOCOUPLER DESCRIPTION The SFH6315/16/43, high speed optocouplers, each consists of a GaAlAs infrared emitting diode, optically coupled with an integrated photodetector and a high speed transistor. The photodetector is junction isolated from the transistor to reduce miller capacitance effects. The open coll | SIEMENS 西门子 | | ||
HIGH SPEED OPTOCOUPLER DESCRIPTION The SFH6315T/16T/43T, high speed optocouplers, each consists of a GaAlAs infrared emitting diode, optically coupled with an integrated photodetector and a high speed transistor. The photodetector is junction isolated from the transistor to reduce miller capacitance effects. The open c | SIEMENS 西门子 | | ||
6 - 17 GHz Dual-Channel Power Amplifier 文件：760.05 Kbytes Page：10 Pages | TRIQUINT | | ||
6 - 17 GHz Dual-Channel Power Amplifier 文件：760.05 Kbytes Page：10 Pages | TRIQUINT | |
FDG6316P产品属性
- 类型
描述
- Pb-free：
Pb
- Halide free：
H
- Status：
Active
- Channel Polarity：
P-Channel
- Configuration：
Dual
- V(BR)DSS Min (V)：
-12
- VGS Max (V)：
8
- VGS(th) Max (V)：
-1.5
- ID Max (A)：
-0.7
- PD Max (W)：
0.3
- RDS(on) Max @ VGS = 2.5 V(mΩ)：
Q1=Q2=360
- RDS(on) Max @ VGS = 4.5 V(mΩ)：
Q1=Q2=270
- Qg Typ @ VGS = 4.5 V (nC)：
0.86
- Qg Typ @ VGS = 10 V (nC)：
1.7
- Ciss Typ (pF)：
146
- Package Type：
SC-88-6/SC-70-6/SOT-363-6
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ON/安森美 |
25+ |
SOT-363 |
34759 |
ON/安森美全新特价FDG6316P-NL即刻询购立享优惠#长期有货 |
|||
FAIRCHILD/仙童 |
19+ |
NA |
42000 |
||||
ONSEMI |
21+ |
SOT23-6 |
36000 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
24+/25+ |
194 |
原装正品现货库存价优 |
|||||
ON |
2025+ |
N/A |
70000 |
柒号只做原装 现货价秒杀全网 |
|||
ON/安森美 |
24+ |
SOT23 |
6000 |
代理货源假一赔十 |
|||
ON/安森美 |
23+ |
SOT-323-6 |
12580 |
进口原装现货 |
|||
ON(安森美) |
23+ |
SC-70-6(SOT-363) |
13087 |
公司只做原装正品,假一赔十 |
|||
ONSEMI |
24+ |
1218000 |
原装优势现货 |
||||
ON(安森美) |
23+ |
NA |
20094 |
正纳10年以上分销经验原装进口正品做服务做口碑有支持 |
FDG6316P规格书下载地址
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DdatasheetPDF页码索引
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