丝印代码：.16；P-Channel 1.8V Specified PowerTrench ®MOSFET

General Description This P-Channel 1.8V specified MOSFET uses Fairchild’s advanced low voltage PowerTrench process. It has been optimized for battery power management applications. Applications • Battery management • Load switch Features • –0.7 A, –12 V. RDS(ON) = 270 mΩ @ VGS = –4.5 V

P-Channel 1.8V Specified PowerTrench MOSFET

General Description This P-Channel 1.8V specified MOSFET uses Fairchild’s advanced low voltage PowerTrench process. It has been optimized for battery power management applications. Features • –0.7 A, –12 V. RDS(ON) = 270 mΩ @ VGS = –4.5 V RDS(ON) = 360 mΩ @ VGS = –2.5 V RDS(ON) = 650 mΩ @ VGS =

Dual P-Channel 20 V (D-S) MOSFET

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P - Channel MOSFET

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P-Channel 1.8V Specified PowerTrench MOSFET

P-Channel 1.8V Specified PowerTrench MOSFET

General Description This P-Channel 1.8V specified MOSFET uses Fairchild’s advanced low voltage PowerTrench process. It has been optimized for battery power management applications. Features • –0.7 A, –12 V. RDS(ON) = 270 mΩ @ VGS = –4.5 V RDS(ON) = 360 mΩ @ VGS = –2.5 V RDS(ON) = 650 mΩ @ VGS =

HIGH SPEED OPTOCOUPLER

DESCRIPTION The SFH6315/16/43, high speed optocouplers, each consists of a GaAlAs infrared emitting diode, optically coupled with an integrated photodetector and a high speed transistor. The photodetector is junction isolated from the transistor to reduce miller capacitance effects. The open coll

HIGH SPEED OPTOCOUPLER

DESCRIPTION The SFH6315T/16T/43T, high speed optocouplers, each consists of a GaAlAs infrared emitting diode, optically coupled with an integrated photodetector and a high speed transistor. The photodetector is junction isolated from the transistor to reduce miller capacitance effects. The open c

6 - 17 GHz Dual-Channel Power Amplifier

文件：760.05 Kbytes Page：10 Pages

6 - 17 GHz Dual-Channel Power Amplifier

文件：760.05 Kbytes Page：10 Pages