N 沟道，PowerTrench® MOSFET，20 V，2.2 A，70 mΩ

此N沟道MOSFET是专为使用同步或传统开关PWM控制器来改进DC/DC转换器整体功效而设计的。 它专为小型开关调节器而优化，可在小型封装中提供极低的rDS(on)和栅极电荷(Qg)。 •VGS = 4.5 V，ID = 2.2 A时，最大rDS(on) = 70mΩ\n•VGS = 2.5 V，ID = 2.0 A时，最大rDS(on) = 77 mΩ\n•VGS = 1.8 V，ID = 1.8 A时，最大rDS(on) = 87 mΩ\n•VGS = 1.5 V，ID = 1.5 A时，最大rDS(on) = 115 mΩ\n•HBM静电放电保护等级为>2kV（注3）\n•高性能沟道技术可实现极低的rDS(on)\n•高功率和高电流处理能力\n•快速开关速度\n•低栅极电荷 \n•符合RoHS标准;

Single N-Channel PowerTrench짰 MOSFET 20 V, 2.2 A, 70 m廓

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N-channel silicon field-effect transistors

DESCRIPTION Asymmetrical N-channel planar epitaxial junction field-effect transistors in a plastic TO-92 variant; intended for applications up to the VHF range. These FETs can be supplied in four IDSS groups. Special features are the low feedback capacitance and the low noise figure. Thanks

N-channel silicon field-effect transistors

DESCRIPTION Asymmetrical N-channel planar epitaxial junction field-effect transistors in a plastic TO-92 variant; intended for applications up to the VHF range. These FETs can be supplied in four IDSS groups. Special features are the low feedback capacitance and the low noise figure. Thanks

5 AMPERE POWER TRANSISTOR NPN SILICON

High Voltage NPN Silicon Transistors . . . designed for medium to high voltage inverters, converters, regulators and switching circuits. • High Collector–Emitter Voltage — VCEO = 200 Volts • DC Current Gain Specified @ 1.0 and 2.5 Adc • Low Collector–Emitter Saturation Voltage — VCE(sat) = 0.8

POWER RECTIFIERS(4.0A,500-1000V)

Fast Settling, Video Op Amp with Disable

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