isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID=50A@ TC=25℃ ·Drain Source Voltage : VDSS=40V(Min) ·Static Drain-Source On-Resistance : RDS(on) =4.1mΩ(Max) @VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC conv

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID=50A@ TC=25℃ ·Drain Source Voltage : VDSS=40V(Min) ·Static Drain-Source On-Resistance : RDS(on) =4.2mΩ(Max) @VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC conv

N-channel Advanced Mode Power MOSFET

Features  VDS= 40V, ID= 150A RDS(ON)

N-Channel Power Trench짰 MOSFET

文件：706.74 Kbytes Page：7 Pages

High Perform Instr, 1 Pr #16 Str TC, PVC Ins E2, PVC Jkt, PLTC

Product Description High Performance Instrumentation, 1 Pair 16AWG (19x29) Tinned Copper, PVC Insulation E2 Color Code, PVC Outer Jacket, PLTC

Single N-Channel Enhancement Mode Field Effect Transistor

General Description This N-Channel Logic Level MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. These devices are particularly suited for low

N-Channel 20V (D-S) MOSFET

文件：1.0163 Mbytes Page：9 Pages

6-32 BINDING HEAD SCREW

文件：248.52 Kbytes Page：1 Pages

MACHINE SCREW PAN PHILLIPS 10-32

文件：130.87 Kbytes Page：1 Pages