isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID=94A@ TC=25℃ ·Drain Source Voltage : VDSS=30V(Min) ·Static Drain-Source On-Resistance : RDS(on) =5.7mΩ(Max) @VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC conv

30V N-Channel MOSFET

Features VDS (V) = 30V ID = 35A (VGS = 10V) RDS(ON) =5.7mW (VGS = 10V) RDS(ON) =6.8mW (VGS = 4.5V)

N-channel Advanced Mode Power MOSFET

Features  VDS= 40V, ID= 150A RDS(ON)

30V N-Channel MOSFET

Description This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/ DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low rDS(ON) and fast switching speed. Features VDS (V) =

N 沟道，PowerTrench® MOSFET， 30V，94A，4.7mΩ

N-Channel 30-V (D-S) MOSFET

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N-Channel PowerTrench MOSFET

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N-Channel PowerTrench짰 MOSFET

文件：622.66 Kbytes Page：11 Pages

N-Channel PowerTrench® MOSFET 30V, 94A, 5.7mΩ

General Description This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low rDS(ON) and fast switching speed. Features • rD

N-Channel Enhancement Mode Power MOSFET

Features | + 30V,90A Rosin 3.88m0@Vas = 10V (Typ) + Advanced Trench Technology « Provide Excellent Rosow and Low Gate Charge + Lead free product is acquired |

N-Channel PowerTrench짰 MOSFET

文件：622.66 Kbytes Page：11 Pages

N-Channel PowerTrench짰 MOSFET 30V, 94A, 5.7m廓

文件：1.04027 Mbytes Page：11 Pages

N-Channel PowerTrench짰 MOSFET

文件：1.04027 Mbytes Page：11 Pages

30 V、94 A、4.7 mΩ、l DPAKN 沟道 PowerTrench®

Advanced PMU for Samsung S3C6410

GENERAL DESCRIPTION The ACT8896 is a complete, cost effective, highly-efficient ActivePMUTM power management solution, optimized for the unique power, voltage-sequencing, and control requirements of the Samsung S3C6410 processor.     FEATURES • Optimized for Samsung S3C6410 Processor • Three

3M??Scotch짰 Strapping Tape 8896

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ANTI-STATIC IC TRAY CLIP

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N-Channel PowerTrench짰 MOSFET

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N-Channel PowerTrench MOSFET 30V, 93A, 5.7 m ohm

文件：269.73 Kbytes Page：11 Pages