General Description

This N-Channel MOSFET has been designed specifically to

improve the overall efficiency of DC/DC converters using

either synchronous or conventional switching PWM

controllers. It has been optimized for low gate charge, low

rDS(ON) and fast switching speed.

Features

• rDS(ON) = 5.7mΩ, VGS = 10V, ID = 35A

• rDS(ON) = 6.8mΩ, VGS = 4.5V, ID = 35A

• High performance trench technology for extremely low

rDS(ON) • Low gate charge

• High power and current handling capability

• Qualified to AEC Q101

• RoHS Compliant

Applications

• DC/DC converters