isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID=93A@ TC=25℃ ·Drain Source Voltage : VDSS=30V(Min) ·Static Drain-Source On-Resistance : RDS(on) =5.7mΩ(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC c

N 沟道，PowerTrench® MOSFET，30V，93A，5.7mΩ

N-Channel PowerTrench MOSFET 30V, 93A, 5.7 m ohm

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N-Channel PowerTrench짰 MOSFET

文件：553.45 Kbytes Page：11 Pages

N-Channel PowerTrench짰 MOSFET

文件：553.45 Kbytes Page：11 Pages

30 V、93 A、4.7 mΩ、D2PAKN 沟道 PowerTrench®

N-Channel PowerTrench짰 MOSFET

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Advanced PMU for Samsung S3C6410

GENERAL DESCRIPTION The ACT8896 is a complete, cost effective, highly-efficient ActivePMUTM power management solution, optimized for the unique power, voltage-sequencing, and control requirements of the Samsung S3C6410 processor.     FEATURES • Optimized for Samsung S3C6410 Processor • Three

3M??Scotch짰 Strapping Tape 8896

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ANTI-STATIC IC TRAY CLIP

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