isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 90A@ TC=25℃ ·Drain Source Voltage : VDSS= 80V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 7.9mΩ(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-D

N-channel Enhancement Mode Power MOSFET

Features  VDS= 80 V, ID= 95A RDS(ON)

N 沟道，PowerTrench® MOSFET，80V，90A，7.9mΩ

N-Channel PowerTrench MOSFET

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Channel PowerTrench® MOSFET 80 V, 90 A, 7.9 mΩ

Features Typical RDS(on) = 5.9 mΩ at VGS = 10V, ID = 80 A Typical Qg(tot) = 34 nC at VGS = 10V, ID = 80 A UIS Capability RoHS Compliant Qualified to AEC Q101 Applications Automotive Engine Control PowerTrain Management Solenoid and Motor Drivers Integrated Starter/Alternator Prim

N 沟道，PowerTrench® MOSFET，80 V，90 A，7.9 mΩ

Automotive Engine Control

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isc N-Channel MOSFET Transistor

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N-Channel Enhancement Mode MOSFET

Features | + Advanced trench cell design «Low Thermal Resistance ~~ + Low Gate Charge