N-Channel PowerTrench짰 MOSFET 100 V, 3.3 A, 100 m

文件：179.19 Kbytes Page：6 Pages

N-Channel 100-V (D-S) MOSFET

文件：977.56 Kbytes Page：6 Pages

N 沟道 Power Trench® MOSFET 100V，3.3A，100mΩ

N-Channel Enhancement Mode Power MOSFET

Application | Load/Power Switching Interfacing Switching Logic Level Shift |

100V N-Channel MOSFET

Features Shielded Gate MOSFET Technology HBM ESD protection level > 6 kV typical (Note 4) High performance trench technology for extremely low RDS(on) High power and current handling capability in a widely used surface mount package VDS =100V ID(at VGS=10V)4.2A RDS(ON) (at VGS=10V)

100V N-Channel MOSFET

Features Shielded Gate MOSFET Technology HBM ESD protection level > 6 kV typical (Note 4) High performance trench technology for extremely low RDS(on) High power and current handling capability in a widely used surface mount package VDS =100V ID(at VGS=10V)4.2A RDS(ON) (at VGS=10V)

N-channel Enhancement Mode Power MOSFET

Features  VDS= 100V, ID= 18.1 A RDS(ON)

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID=5.5A@ TC=25℃ ·Drain Source Voltage : VDSS= 100V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 104mΩ(Max) @VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC

N-Channel Shielded Gate PowerTrench짰 MOSFET 100 V, 5.5 A, 104 m廓

文件：244.91 Kbytes Page：6 Pages