30V N-Channel PowerTrench SyncFET?

General Description The FDD6680S is designed to replace a single MOSFET and Schottky diode in synchronous DC:DC power supplies. This 30V MOSFET is designed to maximize power conversion efficiency, providing a low RDS(ON) and low gate charge. The FDD6680S includes an integrated Schottky diode usin

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID=55A@ TC=25℃ ·Drain Source Voltage : VDSS=30V(Min) ·Static Drain-Source On-Resistance : RDS(on) =11mΩ(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC co

N-channel Advanced Mode Power MOSFET

Features  VDS= 40V, ID= 150A RDS(ON)

N-Channel Logic Level PWM Optimized PowerTrench??MOSFET

General Description This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on state resistance and yet maintain low gate charge for superior switching performance. Features • 46 A, 30 V RDS(ON) = 10 mΩ @ V

0.560-INCH SEVEN SEGMENT DISPLAYS

High Efficiency Buck/Boost Charge Pump Regulator

DESCRIPTION The SP6680 is a charge pump ideal for converting a +3.6V Li-Ion battery input to a +5.0V regulated output. An input voltage range of +2.7V to +6.3V is converted to a regulated output of 5.8V. The SP6680 device will operate at three different switching frequencies corresponding to thre

High Efficiency Buck/Boost Charge Pump Regulator

DESCRIPTION The SP6680 is a charge pump ideal for converting a +3.6V Li-Ion battery input to a +5.0V regulated output. An input voltage range of +2.7V to +6.3V is converted to a regulated output of 5.8V. The SP6680 device will operate at three different switching frequencies corresponding to thre

0.560-INCH SEVEN SEGMENT DISPLAYS

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