30V N-Channel PowerTrench SyncFET?

General Description The FDD6680S is designed to replace a single MOSFET and Schottky diode in synchronous DC:DC power supplies. This 30V MOSFET is designed to maximize power conversion efficiency, providing a low RDS(ON) and low gate charge. The FDD6680S includes an integrated Schottky diode usin

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID=55A@ TC=25℃ ·Drain Source Voltage : VDSS=30V(Min) ·Static Drain-Source On-Resistance : RDS(on) =11mΩ(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC co

N-channel Advanced Mode Power MOSFET

Features  VDS= 40V, ID= 150A RDS(ON)

AND gate

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6680A Series Single-Output, 5000 W DC Power Supplies, GPIB

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N-CHANNEL ENHANCEMENT MODE POWER MOSFET

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Lower Gate Charge, Simple Drive Requirement

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Simple Drive Requirement

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