30V N-Channel PowerTrench SyncFET

General Description The FDD6680AS is designed to replace a single MOSFET and Schottky diode in synchronous DC:DC power supplies. This 30V MOSFET is designed to maximize power conversion efficiency, providing a low RDS(ON) and low gate charge. The FDD6680AS includes an integrated Schottky diode

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID=55A@ TC=25℃ ·Drain Source Voltage : VDSS=30V(Min) ·Static Drain-Source On-Resistance : RDS(on) =10.5mΩ(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC

30V N -Channel MOSFET

Features • Includes SyncFET Schottky body diode • Low gate charge (21nC typical) • High performance trench technology for extremely low RDS(ON) • High power and current handling capability • VDS(V) = 30V • ID =50A (VGS = 10V) • RDS(ON)

N-channel Advanced Mode Power MOSFET

Features  VDS= 40V, ID= 150A RDS(ON)

N 沟道，PowerTrench® SyncFET™ MOSFET，30V，55A，10.5mΩ

30V N-Channel PowerTrench짰 SyncFET?

文件：332.08 Kbytes Page：8 Pages

30V N-Channel PowerTrench SyncFET

General Description The FDD6680AS is designed to replace a single MOSFET and Schottky diode in synchronous DC:DC power supplies. This 30V MOSFET is designed to maximize power conversion efficiency, providing a low RDS(ON) and low gate charge. The FDD6680AS includes an integrated Schottky diode

30V N-Channel PowerTrench짰 SyncFET?

文件：332.08 Kbytes Page：8 Pages

AND gate

文件：87.94 Kbytes Page：1 Pages

6680A Series Single-Output, 5000 W DC Power Supplies, GPIB

文件：1.30168 Mbytes Page：5 Pages

N-CHANNEL ENHANCEMENT MODE POWER MOSFET

文件：202.16 Kbytes Page：5 Pages

Lower Gate Charge, Simple Drive Requirement

文件：99.03 Kbytes Page：4 Pages

Simple Drive Requirement

文件：74.56 Kbytes Page：6 Pages