位置：首页 > IC中文资料第4695页 > FDD5N53TM_WS
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
FDD5N53TM_WS | MOSFET N-CH 530V 4A DPAK | ONSEMI 安森美半导体 |   | |
N-Channel MOSFET 530V, 4A, 1.5廓 Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand hig | FAIRCHILD 仙童半导体 | | ||
N-Channel MOSFET 530V, 4A, 1.5廓 Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand hig | FAIRCHILD 仙童半导体 | | ||
N-Channel MOSFET 530V, 4A, 1.5廓 Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand hig | FAIRCHILD 仙童半导体 | | ||
N-Channel MOSFET 530V, 4A, 1.5廓 Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand hig | FAIRCHILD 仙童半导体 | | ||
N-Channel MOSFET 530V, 4A, 1.5廓 Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand hig | FAIRCHILD 仙童半导体 | |
FDD5N53TM_WS产品属性
- 类型
描述
- 型号
FDD5N53TM_WS
- 功能描述
MOSFET N-Ch
- RoHS
否
- 制造商
STMicroelectronics
- 晶体管极性
N-Channel
- 汲极/源极击穿电压
650 V
- 闸/源击穿电压
25 V
- 漏极连续电流
130 A 电阻汲极/源极
- RDS（导通）
0.014 Ohms
- 配置
Single
- 安装风格
Through Hole
- 封装/箱体
Max247
- 封装
Tube
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
FAIRCHILD |
21+ |
TO-252 |
10 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
NK/南科功率 |
2025+ |
TO-252 |
986966 |
国产 |
|||
FAIRCHILD/仙童 |
21+ |
NA |
30000 |
百域芯优势 实单必成 可开13点增值税 |
|||
FCS |
26+ |
TO263-3L |
86720 |
全新原装正品价格最实惠 假一赔百 |
|||
ONSEMI/安森美 |
24+ |
TO-252 |
60000 |
||||
FAIRCHILD/仙童 |
24+ |
TO252 |
9600 |
原装现货,优势供应,支持实单! |
|||
FAIRCHI |
23+ |
TO252 |
50000 |
全新原装正品现货,支持订货 |
|||
onsemi |
25+ |
TO-252AA |
18798 |
正规渠道,免费送样。支持账期,BOM一站式配齐 |
|||
onsemi |
25+ |
TO-252AA |
18798 |
正规渠道,免费送样。支持账期,BOM一站式配齐 |
|||
FAIRCHI |
23+ |
TO252 |
8650 |
受权代理!全新原装现货特价热卖! |
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DdatasheetPDF页码索引
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