P-Channel PowerTrench짰 MOSFET

General Description This P-Channel MOSFET has been produced using Fairchild Semiconductor’s proprietary PowerTrench® technology to deliver low rDS(on)and optimized Bvdss capability to offer superior performance benefit in the applications. and optimized switching performance capability reducing

P-Channel Enhancement Mode MOSFET

Features Vos=-40V ID=-50 A RDS(ON)

P-Channel MOSFET

Features High performance trench technology for extremely low rDS(on) RoHS Compliant VDS (V) =-40V RDS(ON)

P-channel Enhancement Mode Power MOSFET

Features  VDS= -40V, ID= -40A RDS(ON)

P-Channel MOSFET

Features High performance trench technology for extremely low rDS(on) RoHS Compliant VDS (V) =-40V RDS(ON)

P 沟道，PowerTrench® MOSFET，-40V，-50A，12.3mΩ

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P-Channel PowerTrench짰 MOSFET -40V, -50A, 12.3m廓

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P 沟道，PowerTrench® MOSFET，-40V，-50A，12.3mΩ

P-Channel PowerTrench짰 MOSFET -40V, -50A, 12.3m廓

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