FDD13AN06A0价格
参考价格:¥3.4160
型号:FDD13AN06A0 品牌:Fairchild 备注:这里有FDD13AN06A0多少钱,2026年最近7天走势,今日出价,今日竞价,FDD13AN06A0批发/采购报价,FDD13AN06A0行情走势销售排行榜,FDD13AN06A0报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
丝印代码:FDD13AN06A0;N-Channel PowerTrench짰 MOSFET 60V, 50A, 13.5m廓 文件:626.26 Kbytes Page:12 Pages | ONSEMI 安森美半导体 | |||
FDD13AN06A0 | N-channel Enhancement Mode Power MOSFET Features VDS= 60V, ID= 50A RDS(ON) | BYCHIP 百域芯 | ||
FDD13AN06A0 | N 沟道,PowerTrench® MOSFET,60V,50A,13mΩ N-Channel PowerTrench® MOSFET 60V, 50A, 13mΩ •RDS(on) = 11.5mΩ (典型值) @ VGS = 10V, ID = 50A\n•QG(tot) = 22nC(典型值) @ VGS = 10V\n•低米勒电荷\n•低 Qrr 体二极管\n•UIS 能力(单脉冲和重复脉冲)\n•符合 AEC Q101 标准; | ONSEMI 安森美半导体 | ||
FDD13AN06A0 | N-Channel PowerTrench MOSFET 文件:281.4 Kbytes Page:11 Pages | FAIRCHILD 仙童半导体 | ||
N-Channel PowerTrench짰 MOSFET 60V, 50A, 13.5m廓 文件:210.67 Kbytes Page:11 Pages | FAIRCHILD 仙童半导体 | |||
N-Channel PowerTrench MOSFET 60V, 62A, 13.5mohm N-Channel PowerTrench® MOSFET 60V, 62A, 13.5mΩ Features •rDS(ON)= 11.5mΩ(Typ.), VGS = 10V, ID= 62A •Qg(tot) = 22nC (Typ.), VGS = 10V • Low Miller Charge •Low QRRBody Diode • UIS Capability (Single Pulse and Repetitive Pulse) • Qualified to AEC Q101 Applications • Mot | FAIRCHILD 仙童半导体 | |||
isc N-Channel MOSFET Transistor FEATURES ·Drain Current : ID= 62A@ TC=25℃ ·Drain Source Voltage : VDSS= 60V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 13.5mΩ(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC- | ISC 无锡固电 | |||
isc N-Channel MOSFET Transistor FEATURES ·Drain Current : ID =62A@ TC=25℃ ·Drain Source Voltage : VDSS= 60V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 13.5mΩ(Max) @VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC | ISC 无锡固电 | |||
N-Channel PowerTrench MOSFET 60V, 62A, 13.5mohm N-Channel PowerTrench® MOSFET 60V, 62A, 13.5mΩ Features •rDS(ON)= 11.5mΩ(Typ.), VGS = 10V, ID= 62A •Qg(tot) = 22nC (Typ.), VGS = 10V • Low Miller Charge •Low QRRBody Diode • UIS Capability (Single Pulse and Repetitive Pulse) • Qualified to AEC Q101 Applications • Mot | FAIRCHILD 仙童半导体 |
FDD13AN06A0产品属性
- 类型
描述
- Pb-free:
Pb
- Halide free:
H
- Status:
Active
- Channel Polarity:
N-Channel
- Configuration:
Single
- V(BR)DSS Min (V):
60
- VGS Max (V):
±20
- VGS(th) Max (V):
4
- ID Max (A):
50
- PD Max (W):
115
- RDS(on) Max @ VGS = 10 V(mΩ):
13.5
- Qg Typ @ VGS = 10 V (nC):
22
- Ciss Typ (pF):
1350
- Package Type:
DPAK-3/TO-252-3
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
onsemi |
25+ |
N/A |
22412 |
正规渠道,免费送样。支持账期,BOM一站式配齐 |
|||
ON/安森美 |
2450+ |
TO-252 |
9850 |
只做原装正品现货或订货假一赔十! |
|||
三年内 |
1983 |
只做原装正品 |
|||||
ON |
18+ |
TO-252 |
22 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
ON(安森美) |
2511 |
TO-252AA |
5904 |
电子元器件采购降本 30%!公司原厂直采,砍掉中间差价 |
|||
ON(安森美) |
23+ |
TO-252AA |
10410 |
公司只做原装正品,假一赔十 |
|||
ON/安森美 |
18+ |
TO-252 |
60 |
||||
ON SEMI |
22+ |
TO252 |
20000 |
||||
ONSEMI/安森美 |
25+ |
TO-252 |
60000 |
原装订货实单确认 |
|||
ON/安森美 |
25+ |
TO-252 |
30000 |
全新原装现货,价格优势 |
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