N-Channel PowerTrench MOSFET 60V, 62A, 13.5mohm

N-Channel PowerTrench® MOSFET 60V, 62A, 13.5mΩ Features •rDS(ON)= 11.5mΩ(Typ.), VGS = 10V, ID= 62A •Qg(tot) = 22nC (Typ.), VGS = 10V • Low Miller Charge •Low QRRBody Diode • UIS Capability (Single Pulse and Repetitive Pulse) • Qualified to AEC Q101 Applications • Mot

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 62A@ TC=25℃ ·Drain Source Voltage : VDSS= 60V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 13.5mΩ(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-

N 沟道，PowerTrench® MOSFET，60V，62A，13.5mΩ

N-Channel PowerTrench® MOSFET, 60V, 62A, 13.5mΩ, \nFairchild’s latest shielded gate PowerTrench® MOSFET, which combines a smaller QSYNC and soft reverse-recovery intrinsic body diode performance with fast switching, can substantially improve the efficiency of synchronous rectification. •RDS(ON) = 11.5mΩ（典型值）@ VGS = 10V, ID = 62A\n•QG(tot) = 22nC（典型值）@ VGS = 10V\n•低米勒电荷\n•低 QRR体二极管\n•UIS 能力（单脉冲和重复脉冲）\n•符合 AEC Q101，以前的开发类型为 82555;

N-Channel PowerTrench MOSFET 60V, 62A, 13.5mohm

N-Channel PowerTrench® MOSFET 60V, 62A, 13.5mΩ Features •rDS(ON)= 11.5mΩ(Typ.), VGS = 10V, ID= 62A •Qg(tot) = 22nC (Typ.), VGS = 10V • Low Miller Charge •Low QRRBody Diode • UIS Capability (Single Pulse and Repetitive Pulse) • Qualified to AEC Q101 Applications • Mot

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID =62A@ TC=25℃ ·Drain Source Voltage : VDSS= 60V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 13.5mΩ(Max) @VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC

N-Channel PowerTrench MOSFET

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