Single P-Channel Logic Level PowerTrench짰 MOSFET -30V, -4A, 50mOhm

General Description This P-Channel Logic Level MOSFET is produced using Fairchilds advanced PowerTrench process. It has been optimized for battery power management applications. Features ■ Max rDS(on) = 50 m @ VGS = -10 V, ID = -4A ■ Max rDS(on) = 75 m @ VGS = -4.5 V, ID = -3.4A ■ Low Gate Ch

单 P 沟道，逻辑电平，PowerTrench® MOSFET，-30V，-4A，50mΩ

此P沟道逻辑电平MOSFET采用飞兆先进的PowerTrench工艺生产。 它已针对电池的电源管理应用进行了优化。 •VGS = -10 V，ID = -4A时，最大rDS(on) = 50mΩ\n•VGS = -4.5 V，ID = -3.4A时，最大rDS(on) = 75mΩ\n•低栅极电荷 \n•高性能沟道技术可实现极低的RDS(ON)\n•符合RoHS标准;

P-Channel MOSFET

文件：1.90111 Mbytes Page：4 Pages

P-Channel 30-V (D-S) MOSFET

文件：1.00599 Mbytes Page：9 Pages

NPN SILICON PLANAR MEDIUM POWER HIGH VOLTAGE TRANSISTOR

FEATURES * 400 Volt VCEO * 0.5 Amp continuous current * Ptot=1 Watt * Optimised hfe characterised upto 200mA APPLICATIONS * Telephone dialler circuits * Hook switches for modems * Predrivers within HID lamp ballasts * (SLIC) Subscriber Line Interface Cards

NPN SILICON PLANAR HIGH VOLTAGE TRANSISTOR

FEATURES * 400 Volt VCEO * Low saturation voltage

NPN SILICON PLANAR MEDIUM POWER HIGH VOLTAGE TRANSISTOR

FEATURES * 400 Volt VCEO * 0.5 Amp continuous current * Ptot=1 Watt APPLICATIONS * Telephone dialler circuits

RF POWER TRANSISTOR NPN SILICON

文件：93.98 Kbytes Page：6 Pages

Wideband, Low Power Current Feedback OPERATIONAL AMPLIFIER

文件：215.97 Kbytes Page：13 Pages