General Description

This P-Channel Logic Level MOSFET is produced using Fairchilds advanced PowerTrench process. It has been optimized for battery power management applications.

Features

■ Max rDS(on) = 50 m @ VGS = -10 V, ID = -4A

■ Max rDS(on) = 75 m @ VGS = -4.5 V, ID = -3.4A

■ Low Gate Charge

■ High performance trench technology for extremely low rDS(on)

■ RoHS Compliant

Applications

■ Battery management

■ Load switch

■ Battery protection

■ DC/DC conversion