Integrated Load Switch

General Description This device is particularly suited for compact power management in portable electronic equipment where 3V to 20V input and 2.3A output current capability are needed. This load switch integrates a small N-Channel power MOSFET (Q1) which drives a large P-Channel power MOSFET (

丝印代码：330；Integrated Load Switch

General Description This device is particularly suited for compact power management in portable electronic equipment where 3V to 20V input and 2.3A output current capability are needed. This load switch integrates a small N-Channel power MOSFET (Q1) which drives a large P-Channel power MOSFET (

集成式负载开关

此器件特别适合便携式电子设备的紧凑型电源管理，输入电压为 3 V 至 20 V，输出电流为 2.3 A。 负载开关集成了一个小型N沟道功率MOSFET (Q1)，在一个小型SuperSOT™-6封装中驱动一个大型P沟道功率MOSFET (Q2)。 •VDROP = 0.2 V（VIN = 12 V、IL= 2.5 A、R(ON)= 0.08 Ω时） VDROP=0.2V @ VIN=5V，IL=1.6A。 R(ON)= 0.125 Ω\n•控制 MOSFET (Q1) 包含增强耐静电放电 (ESD) 能力的齐纳二极管保护（>6 kV 人体模型）\n•高性能 PowerTrench™ 技术可实现极低的导通电阻。\n•SuperSOT™ 6 封装设计（使用铜引线框架），可提供出色的热和电气能力。;

集成式负载开关

此器件特别适合便携式电子设备的紧凑型电源管理，输入电压为2.5V至8V，输出电流为2.8A。 该负载开关集成了一个小型N沟道功率MOSFET (Q1)，从而在一个微小的SuperSOT™-6封装中驱动一个大型P沟道功率MOSFET (Q2)。 •–2.8 A，–8 V。\n•VGS = –4.5 V时，RDS(ON) = 55 mΩ\n•VGS = –2.5 V时，RDS(ON) = 70 mΩ\n•VGS = –1.8 V时，RDS(ON) = 100 mΩ\n•控制MOSFET (Q1)包含增强耐静电放电能力的齐纳二极管保护（>6KV人体模型）\n•高性能沟道技术可实现极低的RDS(ON);

Integrated Load Switch

General Description This device is particularly suited for compact power management in portable electronic equipment where 2.5V to 8V input and 2.8A output current capability are needed. This load switch integrates a small N-Channel power MOSFET (Q1) that drives a large P-Channel power MOSFET (Q2

Integrated Load Switch

General Description This device is particularly suited for compact power management in portable electronic equipment where 2.5V to 8V input and 2.8A output current capability are needed. This load switch integrates a small N-Channel power MOSFET (Q1) that drives a large P-Channel power MOSFET (Q2

丝印代码：331K；Load Switch with Level-Shift

Product Summary * -2.8A,-8V * RDS(ON)=45m2 @ VGS=4.5V(Typ) * RDS(ON)=50m2 @ VGS=2.5V(Typ) * RDS(ON)-80m 2 @ VGS=1.8V(Typ) * FDC6331L Pin to Pin fully compatible

Common Source Load Switch P-Channel 1.8V Specified PowerTrench MOSFET

General Description This Load Switch integrates an N-Channel Power MOSFET that drives Common-Source P-Channels and in a small SuperSotTM–6 package. It uses Fairchild’s advanced low voltage PowerTrench process. The RDS(ON) is 750 mΩ per the switch @ VGS 1.8Vand is optimized for battery power manag

30V N & P-Channel PowerTrench MOSFETs

General Description These N & P-Channel MOSFETs are produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance. Features · Q12.5 A, 30V. RDS(ON)= 95 mW@ VGS

N-Channel Enhancement Mode Field Effect Transistor

General Description This N-Channel enhancement mode power field effect transistors is produced using Fairchilds proprietary, high cell density, DMOS technology. This very high density process is tailored to minimize on-state resistance. These devices are particularly suited for low voltage applic

Integrated Load Switch

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Integrated Load Switch

文件：91.19 Kbytes Page：4 Pages

封装/外壳：SOT-23-6 细型，TSOT-23-6 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：IC PWR SWITCH P-CH 1:1 SUPERSOT6 集成电路（IC） 配电开关，负载驱动器

Integrated Load Switch

文件：91.19 Kbytes Page：4 Pages

Common Source Load Switch P-Channel 1.8V Specified PowerTrench MOSFET

封装/外壳：SOT-23-6 细型，TSOT-23-6 包装：卷带（TR） 描述：IC PWR DRVR P-CH 1:1 SUPERSOT-6 集成电路（IC） 配电开关，负载驱动器

Military DC-DC Power Supplies

文件：150.47 Kbytes Page：4 Pages

Military DC-DC Power Supplies

文件：150.47 Kbytes Page：4 Pages

Military DC-DC Power Supplies

文件：150.47 Kbytes Page：4 Pages

Military DC-DC Power Supplies

文件：150.47 Kbytes Page：4 Pages

Military DC-DC Power Supplies

文件：150.47 Kbytes Page：4 Pages