Integrated Load Switch

General Description This device is particularly suited for compact power management in portable electronic equipment where 3V to 20V input and 2.3A output current capability are needed. This load switch integrates a small N-Channel power MOSFET (Q1) which drives a large P-Channel power MOSFET (

Integrated Load Switch

General Description This device is particularly suited for compact power management in portable electronic equipment where 3V to 20V input and 2.3A output current capability are needed. This load switch integrates a small N-Channel power MOSFET (Q1) which drives a large P-Channel power MOSFET (

Integrated Load Switch

General Description This device is particularly suited for compact power management in portable electronic equipment where 2.5V to 8V input and 2.8A output current capability are needed. This load switch integrates a small N-Channel power MOSFET (Q1) that drives a large P-Channel power MOSFET (Q2

Integrated Load Switch

General Description This device is particularly suited for compact power management in portable electronic equipment where 2.5V to 8V input and 2.8A output current capability are needed. This load switch integrates a small N-Channel power MOSFET (Q1) that drives a large P-Channel power MOSFET (Q2

Load Switch with Level-Shift

Product Summary * -2.8A,-8V * RDS(ON)=45m2 @ VGS=4.5V(Typ) * RDS(ON)=50m2 @ VGS=2.5V(Typ) * RDS(ON)-80m 2 @ VGS=1.8V(Typ) * FDC6331L Pin to Pin fully compatible

Common Source Load Switch P-Channel 1.8V Specified PowerTrench MOSFET

General Description This Load Switch integrates an N-Channel Power MOSFET that drives Common-Source P-Channels and in a small SuperSotTM–6 package. It uses Fairchild’s advanced low voltage PowerTrench process. The RDS(ON) is 750 mΩ per the switch @ VGS 1.8Vand is optimized for battery power manag

30V N & P-Channel PowerTrench MOSFETs

General Description These N & P-Channel MOSFETs are produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance. Features · Q12.5 A, 30V. RDS(ON)= 95 mW@ VGS

N-Channel Enhancement Mode Field Effect Transistor

General Description This N-Channel enhancement mode power field effect transistors is produced using Fairchilds proprietary, high cell density, DMOS technology. This very high density process is tailored to minimize on-state resistance. These devices are particularly suited for low voltage applic

Integrated Load Switch

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Integrated Load Switch

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封装/外壳：SOT-23-6 细型，TSOT-23-6 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：IC PWR SWITCH P-CH 1:1 SUPERSOT6 集成电路（IC） 配电开关，负载驱动器

Integrated Load Switch

文件：91.19 Kbytes Page：4 Pages

封装/外壳：SOT-23-6 细型，TSOT-23-6 包装：卷带（TR） 描述：IC PWR DRVR P-CH 1:1 SUPERSOT-6 集成电路（IC） 配电开关，负载驱动器

633M Series D-Sub Connectors | Machined Pins | High Density Three Contact Rows with 0.350 (8.89mm) Footprint Right Angle Bend | Plug

Features High Density Three Contact Rows with .350(8.89mm) Footprint Right Angle Bend with Machined Contacts .090(2.29mm) Contact Spacing 0.078(1.98mm) Row Spacing Plug and Receptacle in 15, 26, 44 or 62 Contact Sizes Pin and Socket Contact Mating Design with P.C. Tail Termination M

633 Series D-Sub Connectors | High Density Three Contact Rows with .350(8.89mm) Footprint RightAngle Bend | Plug

Features High Density Three Contact Rows with .350(8.89mm) Footprint Right Angle Bend Standard Contact Spacing and Row Spacing Optional 9th pin recessed on 15 Contact Size in accordance with VESA Display Data Channel Standard Plug and Receptacle in 15, 26, 44, 62 or 78 Contact Sizes

633W Series D-Sub Connectors | Waterproof | High Density | 0.090 (2.29mm) Contact Spacing x 0.078 (1.98mm) Row Spacing | Right Angle | Plug

Features High Density Waterproof D-Sub .090(2.29mm) Contact Spacing x .078(1.98mm) Row Spacing Plug and Receptacle in 15, 26 or 44 Contact Pin Sizes Pin Contact Mating Design with P.C. Tail Termination in Right Angle, Straight or Solder Cup Termination Plug Shell Indents Provide Gro

Low Frequencies

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60V Complementary Enhancement Mode Field Effect Transistor

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