Dual N & P-Channel 2.5V Specified PowerTrenchTM MOSFET

文件：323.19 Kbytes Page：12 Pages

MOSFET

Dual N & P-Channel 2.5V Specified PowerTrenchTM MOSFET

双 N 和 P 沟道，PowerTrench® MOSFET，2.5V 指定

这些N和P沟道2.5V额定MOSFET采用飞兆半导体先进的PowerTrench工艺生产，这一先进工艺是专为最大程度地降低导通阻抗并保持低栅极电荷以获得卓越开关性能而定制的。 这些器件经过专门设计，能在极小的空间内实现优异的功率耗散，非常适合那些不宜采用更大更昂贵的SO-8和TSSOP-8封装的应用。 •N沟道2.7A，20V。 RDS(on) = 0.08Ω @ VGS = 4.5V，RDS(on) = 0.12Ω @ VGS = 2.5V P沟道-1.6A，-20V。RDS(on) = 0.17Ω @VGS= -4.5V，RDS(on) = 0.25Ω @ V GS = -2.5V\n• P-Channel -1.6A, -20V RDS(on) = 0.17Ω @ VGS = -4.5V RDS(on) = 0.25Ω @ VGS = -2.5V\n•开关速度快。\n•低栅极电荷。\n•高性能沟道技术可实现极低的RDS(ON) 。\n•SuperSOT™ -6封装： 小尺寸（比标准SO;

N- and P-Channel V (D-S) MOSFET

文件：1.13147 Mbytes Page：10 Pages

Dual N & P-Channel 2.5V Specified PowerTrenchTM MOSFET

文件：323.19 Kbytes Page：12 Pages

6 / 4 CHANNEL VOLTAGE SENSE GMR PREAMPLIFIER

DESCRIPTION L6327/L6332 is a BICMOS monolithic integrated circuit GMR differential preamplifier designed for use with four-terminal magneto-resistive GMR read/inductive write heads. It is available as either a six (L6327) or four (L6332) channel device. The devices consist of a voltage-sense, cur

3-Pin, Ultra-Low-Power SC70/SOT 關P Reset Circuits

General Description The MAX6326/MAX6327/MAX6328/MAX6346/MAX6347/MAX6348 microprocessor (µP) supervisory circuits monitor the power supplies in µP and digital systems. These devices provide excellent circuit reliability and low cost by eliminating external components and adjustments when used with

3-Pin, Ultra-Low-Power SC70/SOT 關P Reset Circuits

General Description The MAX6326/MAX6327/MAX6328/MAX6346/MAX6347/MAX6348 microprocessor (µP) supervisory circuits monitor the power supplies in µP and digital systems. These devices provide excellent circuit reliability and low cost by eliminating external components and adjustments when used with