250V N-Channel MOSFET

Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe,DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand

DESIGN/PROCESS CHANGE NOTIFICATION

Description SuperFET®II MOSFET is Fairchild Semiconductor®’s first generation of high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance.This advanced technology is tailored to minimize conducti

丝印代码：FDB33N25；N-Channel UniFET™ MOSFET 250 V, 33 A, 94 mΩ

Features • RDS(on) = 94 mΩ (Max.) @ VGS = 10 V, ID = 16.5 A • Low Gate Charge (Typ. 36.8 nC) • Low Crss (Typ. 39 pF) • 100% Avalanche Tested Applications • PDP TV • Lighting • Uninterruptible Power Supply • AC-DC Power Supply Description UniFETTM MOSFET is Fairchild Semiconducto

250V N-Channel MOSFET

文件：909.52 Kbytes Page：9 Pages

250V N-Channel MOSFET

Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe,DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand

250V N-Channel MOSFET

文件：909.52 Kbytes Page：9 Pages

250V N-Channel MOSFET

文件：909.52 Kbytes Page：9 Pages

250V N-Channel MOSFET

文件：1.62145 Mbytes Page：8 Pages

250V N-Channel MOSFET

文件：832.62 Kbytes Page：8 Pages