丝印代码：FDB2532；N-Channel PowerTrench® MOSFET 150 V, 79 A, 16 mΩ

Features • RDS(on) = 14 mΩ ( Typ.) @ VGS = 10 V, ID = 33 A • QG(tot) = 82 nC ( Typ.) @ VGS = 10 V • Low Miller Charge • Low Qrr Body Diode • UIS Capability (Single Pulse and Repetitive Pulse) Applications • Consumer Appliances • Synchronous Rectification • Battery Protection Circuit •

丝印代码：FDB2532；MOSFET – N-Channel, POWERTRENCH 150 V, 79 A, 16 m

Features • RDS(ON) = 14 m (Typ.), VGS = 10 V, ID = 33 A • Qg (tot) = 82 nC (Typ.), VGS = 10 V • Low Miller Charge • Low QRR Body Diode • UIS Capability (Single Pulse and Repetitive Pulse) • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free and are RoHS Compliant Applicatio

N-Channel PowerTrench MOSFET 150V, 79A, 16m?

Features • rDS(ON) = 14mΩ (Typ.), VGS = 10V, ID = 33A • Qg(tot) = 86nC (Typ.), VGS = 10V • Low Miller Charge • Low QRR Body Diode • UIS Capability (Single Pulse and Repetitive Pulse) • Qualified to AEC Q101 Formerly developmental type 82884 Applications • DC/DC conve

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 79A@ TC=25℃ ·Drain Source Voltage : VDSS= 150V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 16mΩ(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-D

N 沟道 PowerTrench® MOSFET，150V，79A，16mΩ

N-Channel PowerTrench® MOSFET 150V, 79A, 16mΩ, Fairchild’s latest shielded gate PowerTrench® MOSFET, which combines a smaller QSYNC and soft reverse-recovery intrinsic body diode performance with fast switching, can substantially improve the efficiency of synchronous rectification. •RDS(on) = 14mΩ （典型值） @ VGS = 10V, ID = 33A\n•QG(tot) = 82nC（典型值） @ VGS = 10V\n•低米勒电荷\n•低 Qrr 体二极管\n•UIS 能力（单脉冲和重复脉冲）\n•符合 AEC Q101 标准;

N 沟道，PowerTrench® MOSFET，150V，79A，16mΩ

N-Channel PowerTrench® MOSFET 150V, 79A, 16mΩ, Fairchild’s latest shielded gate PowerTrench® MOSFET, which combines a smaller QSYNC and soft reverse-recovery intrinsic body diode performance with fast switching, can substantially improve the efficiency of synchronous rectification •rDS(ON) = 14 mΩ （典型值）、VGS = 10 V、ID = 33 A\n•Qg(tot) = 82nC（典型值），VGS = 10V\n•低米勒电荷\n•低 QRR体二极管\n•UIS 能力（单脉冲和重复脉冲）\n•符合 AEC Q101 标准\n•符合 RoHS 标准;

N-Channel PowerTrench짰 MOSFET 150V, 79A, 16m廓

文件：210.54 Kbytes Page：11 Pages

N-Channel PowerTrench짰 MOSFET 150V, 79A, 16m廓

文件：216 Kbytes Page：11 Pages

Silicon Diffused Power Transistor

GENERAL DESCRIPTION New generation, high-voltage, high-speed switching npn transistor in a plastic envelope intended for use in horizontal deflection circuits of high resolution monitors up to 82 kHz.

4096 x 8-BIT UV ERASABLE PROM

4096 x 8-BIT UV ERASABLE PROM (N-CHANNEL, SILICON-GATE)

4096 x 8-BIT UV ERASABLE PROM

4096 x 8-BIT UV ERASABLE PROM (N-CHANNEL, SILICON-GATE)

32k-Bit (4k x 8) UV Erasable PROM

文件：222.54 Kbytes Page：5 Pages

32k-Bit (4k x 8) UV Erasable PROM

文件：222.54 Kbytes Page：5 Pages