N-ChannelPowerTrenchMOSFET150V,79A,16m?

Features •rDS(ON)=14mΩ(Typ.),VGS=10V,ID=33A •Qg(tot)=86nC(Typ.),VGS=10V •LowMillerCharge •LowQRRBodyDiode •UISCapability(SinglePulseandRepetitivePulse) •QualifiedtoAECQ101 Formerlydevelopmentaltype82884 Applications •DC/DCconve

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=79A@TC=25℃ ·DrainSourceVoltage :VDSS=150V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=16mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-D

MOSFET–N-Channel,POWERTRENCH150V,79A,16m

Features •RDS(ON)=14m(Typ.),VGS=10V,ID=33A •Qg(tot)=82nC(Typ.),VGS=10V •LowMillerCharge •LowQRRBodyDiode •UISCapability(SinglePulseandRepetitivePulse) •AEC−Q101QualifiedandPPAPCapable •TheseDevicesarePb−FreeandareRoHSCompliant Applicatio

N-ChannelPowerTrench짰MOSFET150V,79A,16m廓

文件：210.54 Kbytes Page：11 Pages

N-ChannelPowerTrench짰MOSFET150V,79A,16m廓

文件：216 Kbytes Page：11 Pages

SWITCH-MODETRANSFORMERGUIDE

CONSUMERPRODUCTS PulseoffersacompleterangeofSwitch-ModeTransformersinvarioustechnologies(slot,layerandtripleinsulationwire)usedforpowersuppliesintelevision,set-topboxes,satellitereceivers,DVDplayers,telephonechargers,andwhitegoods.Pulsealsooffersanewrangeo

SiliconDiffusedPowerTransistor

GENERALDESCRIPTION Newgeneration,high-voltage,high-speedswitchingnpntransistorinaplasticenvelopeintendedforuseinhorizontaldeflectioncircuitsofhighresolutionmonitorsupto82kHz.

iscSiliconNPNPowerTransistor

DESCRIPTION •Collector-EmitterSustainingVoltage-:VCEO(SUS)=800V(Min) •HighSwitchingSpeed APPLICATIONS •Designedforuseinhorizontaldeflectioncircuitsofhighresolutionmonitors.

Lowcostvideofilter

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LowGateCharge,FastSwitchingPerformance

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