N 沟道，PowerTrench® MOSFET，150V，79A，16mΩ

N-Channel PowerTrench® MOSFET 150V, 79A, 16mΩ, Fairchild’s latest shielded gate PowerTrench® MOSFET, which combines a smaller QSYNC and soft reverse-recovery intrinsic body diode performance with fast switching, can substantially improve the efficiency of synchronous rectification •rDS(ON) = 14 mΩ （典型值）、VGS = 10 V、ID = 33 A\n•Qg(tot) = 82nC（典型值），VGS = 10V\n•低米勒电荷\n•低 QRR体二极管\n•UIS 能力（单脉冲和重复脉冲）\n•符合 AEC Q101 标准\n•符合 RoHS 标准;

N-Channel PowerTrench짰 MOSFET 150V, 79A, 16m廓

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丝印代码：FDB2532；MOSFET – N-Channel, POWERTRENCH 150 V, 79 A, 16 m

Features • RDS(ON) = 14 m (Typ.), VGS = 10 V, ID = 33 A • Qg (tot) = 82 nC (Typ.), VGS = 10 V • Low Miller Charge • Low QRR Body Diode • UIS Capability (Single Pulse and Repetitive Pulse) • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free and are RoHS Compliant Applicatio