FDB12N50价格

参考价格:¥3.9850

型号:FDB12N50FTM_WS 品牌:Fairchild 备注:这里有FDB12N50多少钱,2025年最近7天走势,今日出价,今日竞价,FDB12N50批发/采购报价,FDB12N50行情走势销售排行榜,FDB12N50报价。
型号 功能描述 生产厂家&企业 LOGO 操作
FDB12N50

N-Channel MOSFET 500V, 11.5A, 0.65廓

Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. Features • RDS(on) = 0.55Ω ( Typ.)@ VGS = 10V, ID = 6A • Low gate charge ( Typ. 22nC) • Low Crss ( Typ. 12pF) • Fast switching • 100 avalan

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

FDB12N50

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 11.5A@ TC=25℃ ·Drain Source Voltage : VDSS= 500V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.65Ω(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, D

ISC

无锡固电

FDB12N50

Optimized Switch for Discontinuous Current Mode Power Factor Correction

文件:438.39 Kbytes Page:8 Pages

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

N-Channel MOSFET, FRFET 500V, 11.5A, 0.7廓

Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advance technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 11.5A@ TC=25℃ ·Drain Source Voltage : VDSS= 500V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.7Ω(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC

ISC

无锡固电

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 11.5A@ TC=25℃ ·Drain Source Voltage : VDSS= 500V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.65Ω(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, D

ISC

无锡固电

N-Channel MOSFET 500V, 11.5A, 0.65廓

Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. Features • RDS(on) = 0.55Ω ( Typ.)@ VGS = 10V, ID = 6A • Low gate charge ( Typ. 22nC) • Low Crss ( Typ. 12pF) • Fast switching • 100 avalan

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

DESIGN/PROCESS CHANGE NOTIFICATION

Description SuperFET®II MOSFET is Fairchild Semiconductor®’s first generation of high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance.This advanced technology is tailored to minimize conducti

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 10A@ TC=25℃ ·Drain Source Voltage : VDSS= 500V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.8Ω(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-D

ISC

无锡固电

N-Channel 65 0V (D-S)Power MOSFET

文件:1.10795 Mbytes Page:10 Pages

VBSEMI

微碧半导体

N-Channel MOSFET, FRFET 500V, 11.5A, 0.7廓

文件:377.22 Kbytes Page:8 Pages

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

N-Channel MOSFET, FRFET 500V, 10A, 0.8廓

文件:638.49 Kbytes Page:8 Pages

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

N-Channel MOSFET, FRFET 500V, 10A, 0.8廓

文件:354.51 Kbytes Page:8 Pages

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

N-Channel MOSFET, FRFET 500V, 10A, 0.8廓

文件:354.51 Kbytes Page:8 Pages

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

12 Amps, 500 Volts N-CHANNEL POWER MOSFET

DESCRIPTION The UTC 12N50 is an N-channel mode power MOSFET using UTC’s advanced technology to provide customers with planar stripe and DMOS technology. This technology allows a minimum on-state resistance and superior switching performance. It also can withstand high energy pulse in the avalanch

UTC

友顺

Fast Switching

• FEATURES • Drain Current ID= 12A@ TC=25℃ • Drain Source Voltage- : VDSS= 500V(Min) • Static Drain-Source On-Resistance : RDS(on) = 0.5Ω(Max) • Fast Switching •APPLICATIONS •Switch mode power supply.

ISC

无锡固电

Power MOSFETs

FEATURES • Low Figure-of-Merit Ron x Qg • 100 Avalanche Tested • Gate Charge Improved • Trr/Qrr Improved • Compliant to RoHS Directive 2002/95/EC

VishayVishay Siliconix

威世科技威世科技半导体

12A, 500V N-CHANNEL POWER MOSFET

文件:167.59 Kbytes Page:6 Pages

UTC

友顺

N-Channel 650 V (D-S) MOSFET

文件:1.039369 Mbytes Page:8 Pages

VBSEMI

微碧半导体

FDB12N50产品属性

  • 类型

    描述

  • 型号

    FDB12N50

  • 制造商

    FAIRCHILD

  • 制造商全称

    Fairchild Semiconductor

  • 功能描述

    N-Channel MOSFET 500V, 11.5A, 0.65ヘ

更新时间:2025-8-10 18:00:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
ON/安森美
25+
25000
原厂原包 深圳现货 主打品牌 假一赔百 可开票!
FAIRCHILD/仙童
10+
TO-263
134
FAIRCHILD/仙童
24+
TO263
880000
明嘉莱只做原装正品现货
ON/安森美
24+
TO-263
505348
免费送样原盒原包现货一手渠道联系
FAIRCHILD
25+23+
TO263
13702
绝对原装正品全新进口深圳现货
ON/安森美
21+
D2PAK
8080
只做原装,质量保证
FAIRCHILD/仙童
24+
TO263
8950
BOM配单专家,发货快,价格低
FAIRCHILD
24+
TO-263(D2PAK)
8866
FAIRCHILD/仙童
22+
TO263
35664
原装正品现货
onsemi(安森美)
24+
-
8357
支持大陆交货,美金交易。原装现货库存。

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