N-Channel MOSFET 500V, 11.5A, 0.65廓

Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. Features • RDS(on) = 0.55Ω ( Typ.)@ VGS = 10V, ID = 6A • Low gate charge ( Typ. 22nC) • Low Crss ( Typ. 12pF) • Fast switching • 100 avalan

DESIGN/PROCESS CHANGE NOTIFICATION

Description SuperFET®II MOSFET is Fairchild Semiconductor®’s first generation of high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance.This advanced technology is tailored to minimize conducti

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 11.5A@ TC=25℃ ·Drain Source Voltage : VDSS= 500V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.65Ω(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, D

功率 MOSFET，N 沟道，UniFETTM，500 V，11.5 A，650 mΩ，D2PAK

UniFETTM MOSFET 是飞兆半导体®的高压 MOSFET 系列产品，基于平面条形和 DMOS 技术。 该 MOSFET 产品专用于降低通态电阻，并提供更好的开关性能和更高的雪崩能量强度。 该器件系列适用于开关电源转换器应用，如功率因数校正（PFC）、平板显示器（FPD）电视电源、ATX 及照明设备用镇流器。 •RDS(on) = 550mΩ （典型值）@ VGS = 10V, ID = 6A\n•低栅极电荷（典型值 22nC） \n•低 Crss（典型值 11pF） \n•100% 经过雪崩击穿测试\n•符合 RoHS 标准;

500V N-Channel MOSFET

General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withs

500V N-Channel MOSFET

General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withs

N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Features • Ultrafast rectifier in parallel with the body diode (MSAE type only) • Rugged polysilicon gate cell structure • Increased Unclamped Inductive Switching (UIS) capability • Hermetically sealed, surface mount power package • Low package inductance • Very low thermal resistance • Rev

DUAL 50V NPN SILICON LOW SATURATION SWITCHING TRANSISTOR

DESCRIPTION This new 4th generation ultra low saturation transistor utilises the Zetex matrix structure combined with advanced assembly techniques to give extremely low on state losses. This makes it ideal for high efficiency, low voltage switching applications. FEATURES • Extremely Low Equivale

DUAL 50V NPN SILICON LOW SATURATION SWITCHING TRANSISTOR

DESCRIPTION This new 4th generation ultra low saturation transistor utilises the Zetex matrix structure combined with advanced assembly techniques to give extremely low on state losses. This makes it ideal for high efficiency, low voltage switching applications. FEATURES • Extremely Low Equivale