650V半桥栅极驱动器

  FD2501是一个高电压、高速栅极驱动器，能够驱动N型功率MOSFET和IGBT。内置欠压（UVLO）保护功能，防止功率管在过低的电压下工作。FD2501逻辑输入兼容TTL和CMOS（低至3.3V），方便与控制设备接口。该驱动器输出具有最小驱动器跨导的高脉冲电流缓冲设计。 ·悬浮绝对电压+650V\n·电源电压范围10V ~20V\n·dv/dt抑制\n·输出电流+3A/-0.6A\n·3.3V/5V/15V输入逻辑兼容\n·欠压保护（UVLO）\n·高低端通道匹配\n·输出与输入同相\n·VCC/VBS内置钳位\n·;

HIGH CURRENT SILICON BRIDGE RECTIFIERS(VOLTAGE - 50 to 800 Volts CURRENT - 10 to 35 Amperes)

VOLTAGE - 50 to 800 Volts CURRENT - 10 to 35 Amperes FEATURES ● Electrically Isolated Metal Case for Maximum Heat Dissipation ● Surge Overload Ratings to 400 Amperes ● These bridges are on the U/L Recognized Products List for currents of 10, 25 and 35 amperes MECHANICAL DATA

HIGH CURRENT SILICON BRIDGE RECTIFIERS(VOLTAGE - 50 to 800 Volts CURRENT - 15 to 35 Amperes)

VOLTAGE - 50 to 800 Volts CURRENT - 15 to 35 Amperes FEATURES • Plastic Case With Heatsink For Heat Dissipation • Surge Overload Ratings to 400 Amperes • The plastic package has Underwriters Laboratory Flammability Classification 94V-O

DARLINGTON POWER TRANSISTOR COMPLEMENTARY SILICON

Medium-Power Complementary Silicon Transistors . . . for use as output devices in complementary general purpose amplifier applications. • High DC Current Gain — hFE = 4000 (Typ) @ IC = 5.0 Adc • Monolithic Construction with Built–in Base–Emitter Shunt Resistors

Silicon Complementary Transistors High Voltage for Video Output

Features: • High Breakdown Voltage • Excellent High Frequency Characteristics Applications: • High Definition CRT Display • Color TV Chroma Output, High Breakdown Voltage Drivers

Silicon NPN epitaxial planer transistor

Silicon NPN epitaxial planer transistor For general amplification ■ Features ● Two elements incorporated into one package. (Base-coupled transistors) ● Reduction of the mounting area and assembly cost by one half.