NPN SILICON PLANAR MEDIUM POWER TRANSISTOR

FEATURES * 60 Volt VCEO * 1 Amp continuous current * Ptot= 1 Watt

Medium Power Transistor

Features ● 60 Volt VCEO. ● 1 Amp continuous current. ● Ptot= 1 Watt.

SOT89 PNP SILICON PLANAR MEDIUM

Features • BVCEO > -60V • IC = -1A high Continuous Collector Current • ICM = -2A Peak Collector Current • RCE(SAT) = 295mΩ for a Low Equivalent On-Resistance • hFE characterized up to 2A for high current gain hold up • Complementary NPN type: FCX491 • Totally Lead-Free & Fully RoHS comp

SOT89 NPN SILICON PLANAR MEDIUM POWER TRANSISTOR

Features • BVCEO > 60V • IC = 1A Continuous Collector Current • ICM = 2A Peak Pulse Current • RCE(sat) = 195mΩ for a Low Equivalent On-Resistance • hFE Characterized up to 2A for High Current Gain Hold-Up • Complementary PNP Type: FCX591 • Totally Lead-Free & Fully RoHS Compliant (Notes

Silicon NPN Power Transistor

DESCRIPTION · Collector-Emitter Breakdown Voltage -V(BR)CEO= 60V(Min) · Collector-Emitter Saturation Voltage -VCE(sat): 0.25V(Max) @IC= 0.5A APPLICATIONS · Switching Regulators · Converters · Power Amplifiers

NPN, 60V, 1A, SOT89

40V NPN SILICON PLANAR MEDIUM POWER TRANSISTOR IN SOT89

Features • BVCEO > 40V • IC = 1A high Continuous Current • Low saturation voltage VCE(sat)

NPN SILICON PLANAR MEDIUM POWER TRANSISTOR

FEATURES * 1 Amp continuous current

Medium Power Transistor

Features ● 1 Amp continuous current.

40V NPN SILICON PLANAR MEDIUM POWER TRANSISTOR IN SOT89

Features • BVCEO > 40V • IC = 1A high Continuous Current • Low saturation voltage VCE(sat)

SOT89 NPN SILICON PLANAR MEDIUM POWER TRANSISTOR

Features • BVCEO > 60V • IC = 1A Continuous Collector Current • ICM = 2A Peak Pulse Current • RCE(sat) = 195mΩ for a Low Equivalent On-Resistance • hFE Characterized up to 2A for High Current Gain Hold-Up • Complementary PNP Type: FCX591 • Totally Lead-Free & Fully RoHS Compliant (Notes

60V NPN MEDIUM POWER TRANSISTOR IN SOT89

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功率三极管

功率三极管

40V NPN SILICON PLANAR MEDIUM POWER TRANSISTOR IN SOT89

文件：256.69 Kbytes Page：7 Pages

封装/外壳：TO-243AA 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：TRANS NPN 40V 1A SOT89-3 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

封装/外壳：TO-243AA 包装：卷带（TR） 描述：TRANS NPN 60V 1A SOT89-3 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

SUPER LOW NOISE InGaAs HEMT

DESCRIPTION The MGF491xG series super-low-noise HEMT(High Electron Mobility Transistor) is designed for use in L to Ku band amplifiers. The hermetically sealed metal-ceramic package assures minimumu parasitic losses, and has a configuration suitable for microstrip circuits. The MGF491*G series

MOSFET N-Ch, Enhancement Mode High Speed Switch

MOSFET N–Ch, Enhancement Mode High Speed Switch

NPN BISS transistor

DESCRIPTION NPN BISS (Breakthrough In Small Signal) transistor in a SOT23 plastic package. PNP complement: PMMT591A. FEATURES • High current (max. 1 A) • Low collector-emitter saturation voltage ensures reduced power consumption. APPLICATIONS • Battery powered units where high current and lo

NPN BISS transistor

DESCRIPTION NPN BISS (Breakthrough In Small Signal) transistor in a SOT23 plastic package. PNP complement: PMMT591A. FEATURES • High current (max. 1 A) • Low collector-emitter saturation voltage ensures reduced power consumption. APPLICATIONS • Battery powered units where high current and lo

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