型号 功能描述 生产厂家&企业 LOGO 操作
FCU360N65S3R0

MOSFET ??Power, N-Channel, SUPERFET III, Easy Drive 650 V, 10 A, 360 m

Description SUPERFET III MOSFET is ON Semiconductor’s brand−new high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This advanced technology is tailored to minimize conduction loss, pro

ONSEMI

安森美半导体

FCU360N65S3R0

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 10A@ TC=25℃ ·Drain Source Voltage : VDSS= 650V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.36Ω(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-

ISC

无锡固电

FCU360N65S3R0

封装/外壳:TO-251-3 短截引线,IPak 包装:卷带(TR) 描述:MOSFET N-CH 600V IPAK 分立半导体产品 晶体管 - FET,MOSFET - 单个

ONSEMI

安森美半导体

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 10A@ TC=25℃ ·Drain Source Voltage : VDSS= 650V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.36Ω(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-

ISC

无锡固电

MOSFET ??Power, N-Channel, SUPERFET III, Easy Drive 650 V, 10 A, 360 m

Description SUPERFET III MOSFET is ON Semiconductor’s brand−new high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on−resistance and lower gate charge performance. This advanced technology is tailored to minimize conduction loss, pro

ONSEMI

安森美半导体

MOSFET ??Power, N-Channel, SUPERFET III, Easy Drive 650 V, 10 A, 360 m

Description SUPERFET III MOSFET is ON Semiconductor’s brand−new high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This advanced technology is tailored to minimize conduction loss, pro

ONSEMI

安森美半导体

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 10A@ TC=25℃ ·Drain Source Voltage : VDSS= 650V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.36Ω(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-

ISC

无锡固电

MOSFET – Power, N-Channel, SUPERFET III, Easy Drive 650 V, 10 A, 360 m

Description SUPERFET III MOSFET is ON Semiconductor’s brand−new high voltage super−junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on−resistance and lower gate charge performance. This advanced technology is tailored to minimize conduction loss, pro

ONSEMI

安森美半导体

更新时间:2025-8-16 12:44:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
FAIRCHILD/仙童
24+
TO251
880000
明嘉莱只做原装正品现货
ON(安森美)
24+
NA/
8735
原厂直销,现货供应,账期支持!
FAIRCHILD/仙童
24+
TO251
9600
原装现货,优势供应,支持实单!
FAIRCHILD/仙童
23+
TO251
10000
原厂授权一级代理,专业海外优势订货,价格优势、品种
FAIRCHILD/仙童
23+
16+
6500
专注配单,只做原装进口现货
三年内
1983
只做原装正品
FAIRCHILD
20+
TO-251
38900
原装优势主营型号-可开原型号增税票
FAIRCHILD/仙童
23+
16+
6500
专注配单,只做原装进口现货
FAIRCHILD/仙童
2447
TO251
100500
一级代理专营品牌!原装正品,优势现货,长期排单到货
24+
QFP
1000

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