位置：首页 > IC中文资料 > FCPF360N65S3R0
| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
FCPF360N65S3R0 | MOSFET–Power,N-Channel,SUPERFETIII,EasyDrive650V,10A,360m Description SUPERFETIIIMOSFETisONSemiconductor’sbrand−newhigh voltagesuper−junction(SJ)MOSFETfamilythatisutilizingcharge balancetechnologyforoutstandinglowon−resistanceandlowergate chargeperformance.Thisadvancedtechnologyistailoredtominimize conductionloss,pro | ONSEMION Semiconductor 安森美半导体安森美半导体公司 |  |   |
MOSFET–Power,N-Channel,SUPERFETIII,EasyDrive650V,10A,360m Description SUPERFETIIIMOSFETisONSemiconductor’sbrand−newhigh voltagesuper−junction(SJ)MOSFETfamilythatisutilizingcharge balancetechnologyforoutstandinglowon−resistanceandlowergate chargeperformance.Thisadvancedtechnologyistailoredtominimize conductionloss,pro | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | | | |
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent:ID=10A@TC=25℃ ·DrainSourceVoltage :VDSS=650V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.36Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC- | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 |  | | |
MOSFET–Power,N-Channel,SUPERFETIII,EasyDrive650V,10A,360m Description SUPERFETIIIMOSFETisONSemiconductor’sbrand−newhigh voltagesuper−junction(SJ)MOSFETfamilythatisutilizingcharge balancetechnologyforoutstandinglowon−resistanceandlowergate chargeperformance.Thisadvancedtechnologyistailoredtominimize conductionloss,pro | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | | | |
MOSFET??Power,N-Channel,SUPERFETIII,EasyDrive650V,10A,360m Description SUPERFETIIIMOSFETisONSemiconductor’sbrand−newhigh voltagesuper-junction(SJ)MOSFETfamilythatisutilizingcharge balancetechnologyforoutstandinglowon−resistanceandlowergate chargeperformance.Thisadvancedtechnologyistailoredtominimize conductionloss,pro | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | | | |
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent:ID=10A@TC=25℃ ·DrainSourceVoltage :VDSS=650V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.36Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC- | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | | | |
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent:ID=10A@TC=25℃ ·DrainSourceVoltage :VDSS=650V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.36Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC- | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | | | |
MOSFET??Power,N-Channel,SUPERFETIII,EasyDrive650V,10A,360m Description SUPERFETIIIMOSFETisONSemiconductor’sbrand−newhigh voltagesuper-junction(SJ)MOSFETfamilythatisutilizingcharge balancetechnologyforoutstandinglowon-resistanceandlowergate chargeperformance.Thisadvancedtechnologyistailoredtominimize conductionloss,pro | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | | |
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ON |
10+ |
TO-220F |
150 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
onsemi(安森美) |
23+ |
TO220F3 |
6000 |
诚信服务，绝对原装原盘 |
|||
ON/安森美 |
22+ |
TO-220F |
6000 |
只做原装,假一赔十 |
|||
ON/安森美器场效应管 |
24+23+ |
TO-220-3 |
12580 |
16年现货库存供应商终端BOM表可配单提供样品 |
|||
FAIRCHILD |
2017 |
NA |
30 |
全新原装!优势库存热卖中! |
|||
三年内 |
1983 |
纳立只做原装正品13590203865 |
|||||
ON |
21+ |
NA |
3000 |
进口原装 假一罚十 现货 |
|||
ON/FSC |
21+ |
TO-220F |
20 |
原装现货假一赔十 |
|||
ON/安森美 |
23+ |
TO-220F |
30000 |
原装正品公司现货,假一赔十! |
|||
ON/安森美 |
19+ |
TO-220F |
4500 |
只做原装只有原装可开增值税票 |
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FCPF360N65S3R0规格书下载地址
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FCPF360N65S3R0数据表相关新闻
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2021-12-7FCP190N65F 全新原装现货
原装正品现货热卖中，焕盛达-专注原装用芯服务；
2020-7-21FCN-360C048-B
FCN-360C048-B，全新原装当天发货或门市自取0755-82732291.
2019-12-26FCPF400N80Z原装现货厂商：FAIRCHILD/仙童2015+封装：TO-220F
FCPF400N80Z 277 FAIRCHILD/仙童 2015+ TO-220F
2019-9-11
DdatasheetPDF页码索引
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