Schottky Barrier Diode

Schottky Barrier Diode

SBD DUAL DIODES - CATHODE COMMON

FEATURES * Similar to TO-220AB Case * Fully Molded Isolation * Dual Diodes – Cathode Common * Low Forward Voltage Drop * Low Power Loss,High Efficiency * High Surge Capability * Tj=150 °C operation

肖特基势垒二极管(SBD)-肖特基势垒二极管(SBD)

SBD

文件：142.12 Kbytes Page：1 Pages

N-Channel Enhancement Mode Field Effect Transistor

FEATURES ■ 30V, 197A, RDS(ON) = 2 mΩ @VGS = 10V. RDS(ON) = 3 mΩ @VGS = 4.5V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Lead-free plating ; RoHS compliant. ■ TO-220 & TO-263 package

Schottky Barrier Diode

FEATURES * TO-220AB Case * Fully Molded * Dual Diodes – Cathode Common * Low Forward Voltage Drop * High Surge Capability * Tj=150 °C operation

SMD RELAYS WITH 8GHz CAPABILITIES

文件：602.97 Kbytes Page：5 Pages

SMD RELAYS WITH 8GHz CAPABILITIES

文件：602.97 Kbytes Page：5 Pages

SMD RELAYS WITH 8GHz CAPABILITIES

文件：602.97 Kbytes Page：5 Pages