isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 16A@ TC=25℃ ·Drain Source Voltage : VDSS= 600V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.199Ω(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC

功率 MOSFET，N 沟道，SUPREMOS®，FAST，600 V，16 A，199 mΩ，TO-3P

SupreMOS® MOSFET 是飞兆半导体的下一代高压超级结（SJ）技术，该技术采用区别于传统 SJ MOSFET 产品的深沟槽填充工艺。这项先进技术和精密的工艺控制提供了最低的 Rsp on-resistance（导通电阻规格），卓越的开关性能和耐用性。SupreMOS MOSFET 技术适用于高频开关电源转换器应用，如功率因数校正(PFC)、服务器/电信电源、平板电视电源、ATX 电源及工业电源应用。 •RDS(on) = 170mΩ （典型值）@ VGS = 10V, ID = 8A\n•超低栅极电荷（典型值Qg = 40.2nC )\n•低有效输出电容（典型值Coss.eff = 176pF )\n•100% 经过雪崩击穿测试\n•符合 RoHS 标准;

包装：卷带（TR） 描述：MOSFET N-CH 600V TO-3PN 分立半导体产品 晶体管 - FET，MOSFET - 单个

N-Channel MOSFET 600V, 16A, 0.170W

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600V N-Channel MOSFET

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600V N-Channel MOSFET

Description SuperFET™ is, Farichild’s proprietary, new generation of high voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low on-resistance and lower gate charge performance. This advanced technology has been tailored to minimize conduction loss, pro

600V N-Channel MOSFET

Description SuperFET™ is, Farichild’s proprietary, new generation of high voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low on-resistance and lower gate charge performance. This advanced technology has been tailored to minimize conduction loss, pro

SMPS MOSFET

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Low V CE(sat) IGBT - Short Circuit SOA Capability

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