600V N-Channel MOSFET

Description SuperFET™ is, Farichild’s proprietary, new generation of high voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low on-resistance and lower gate charge performance. This advanced technology has been tailored to minimize conduction loss, pro

PFCPWM Combination Controller

Introduction This application note describes step-by-step design considerations for a power supply using the FAN480X controller. The FAN480X combines a PFC controller and a PWM controller. The PFC controller employs average current mode control for Continuous Conduction Mode (CCM) boost converter

DESIGN/PROCESS CHANGE NOTIFICATION

Description SuperFET®II MOSFET is Fairchild Semiconductor®’s first generation of high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance.This advanced technology is tailored to minimize conducti

N 沟道 SuperFET® MOSFET 600 V, 16 A, 260 mΩ

SuperFET® MOSFET 是飞兆半导体第一代利用电荷平衡技术实现出色低导通电阻和更低栅极电荷性能的高压超级结（SJ）MOSFET 系列产品。 这项技术专用于最小化导通损耗并提供卓越的开关性能、dv/dt 额定值和更高雪崩能量。 因此，SuperFET MOSFET 非常适合开关电源应用，如功率因数校正(PFC)、服务器/电信电源、平板电视电源、ATX 电源及工业电源应用。 •650V @TJ = 150°C\n•典型值 Rds(on) = 0.22O\n•超低栅极电荷（典型值 Qg=55nC)\n•低有效输出电容（典型值 Coss.eff=110pF)\n•100% 经过雪崩击穿测试;

Power Factor Correction Converter Design

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600V N-Channel MOSFET

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DESIGN/PROCESS CHANGE NOTIFICATION

Description SuperFET®II MOSFET is Fairchild Semiconductor®’s first generation of high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance.This advanced technology is tailored to minimize conducti

功率 MOSFET，N 沟道，SUPREMOS®，FAST，600 V，16 A，199 mΩ，TO-220

SupreMOS® MOSFET 是飞兆半导体的下一代高压超级结（SJ）技术，该技术采用区别于传统 SJ MOSFET 产品的深沟槽填充工艺。这项先进技术和精密的工艺控制提供了最低的 Rsp on-resistance（导通电阻规格），卓越的开关性能和耐用性。SupreMOS MOSFET 技术适用于高频开关电源转换器应用，如功率因数校正(PFC)、服务器/电信电源、平板电视电源、ATX 电源及工业电源应用。 •RDS(on) = 170mΩ （典型值）@ VGS = 10V, ID = 8A\n•超低栅极电荷（典型值Qg = 40.2nC )\n•低有效输出电容（典型值Coss.eff = 176pF )\n•100% 经过雪崩击穿测试\n•符合 RoHS 标准;

600V N-Channel MOSFET

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N-Channel MOSFET 600V, 16A, 0.170W

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isc N-Channel MOSFET Transistor

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600V N-Channel MOSFET

Description SuperFET™ is, Farichild’s proprietary, new generation of high voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low on-resistance and lower gate charge performance. This advanced technology has been tailored to minimize conduction loss, pro

600V N-Channel MOSFET

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SMPS MOSFET

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Low V CE(sat) IGBT - Short Circuit SOA Capability

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