High-Speed Switching Composite Diode Cathode Common

Features • Composite type with 4 diodes contained in the CP package currently in use, saving the mounting space greatly. • Fast switching speed.

High-Speed Switching Composite Diode Cathode Common

RF + BB SoC for T-DMB

The FCI FC8080 chip is a highly integrated device for terrestrial digital multimedia Broadcasting. FC8080 has all of the performance needed to enable the full range of T-DMB application. It consists of two main blocks, RF tuner and channel decoder.\nRF block supports single-band (Band-III). It is a • Highly integrated digital device for DAB receiver (Eureka 147)\n• Korea DAB/DMB (TTAS.KO -07.0024 and TTAS.KO-07.0026) standard compliant\n• DAB OFDM channel demodulator and decoder• Fully integrated, supports all DAB functions and modes (I, II, III and IV)\n• Mode Detection (AMD)\n• Full data rat;

SINGLE-PHASE SILICON BRIDGE(VOLTAGE - 50 to 800 Volts CURRENT - P.C. MTG 3A, HEAT-SINK MTG 8A)

VOLTAGE - 50 to 800 Volts CURRENT - P.C. MTG 3A, HEAT-SINK MTG 8A FEATURES • Surge overload rating—200 Amperes peak • Low forward voltage drop and reverse leakage • Small size, simple installation • Plastic package has Underwriter Laboratory Flammability Classification 94V-O

Single Element Detector

The LHi 808 pyroelectric infrared-detector series is designed for infrared measurement and gas analysis applications. It includes a pyroelectric element with FET in source follower connection. As TC version it includes thermal compensation by a special compensation element. This detector is encap

Single Element Detector

The LHi 808 pyroelectric infrared-detector series is designed for infrared measurement and gas analysis applications. It includes a pyroelectric element with FET in source follower connection. As TC version it includes thermal compensation by a special compensation element. This detector is encap

MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 ELEMENTS SUPER MINI MOLD

FEATURES • Low Noise NF = 1.3 dB TYP. @VCE = 2 V, IC = 3 mA, f = 2 GHz NF = 1.3 dB TYP. @VCE = 1 V, IC = 3 mA, f = 2 GHz • A Super Mini Mold Package Adopted • Built-in 2 Transistors (2 × 2SC5184)

MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 ELEMENTS SUPER MINI MOLD

FEATURES • Low Noise NF = 1.3 dB TYP. @VCE = 2 V, IC = 3 mA, f = 2 GHz NF = 1.3 dB TYP. @VCE = 1 V, IC = 3 mA, f = 2 GHz • A Super Mini Mold Package Adopted • Built-in 2 Transistors (2 × 2SC5184)