30V, 500mA Rectifier

30V, 500mA Rectifier Silicon Schottky Barrier Diode Features · Low forward voltage (VF max=0.55V) . · Fast reverse recorvery time (trr max=10ns) . · Composite type with 2 diodes contained in the CP package currently in use, saving the mounting space greatly. · The FC805 is form

30V, 500mA Rectifier Silicon Schottky Barrier Diode

RF + BB SoC for T-DMB

The FCI FC8050Q chip is a highly integrated device for terrestrial digital multimedia Broadcasting. FC8050Q has all of the performance needed to enable the full range of T-DMB application. It consists of two main blocks, RF tuner and channel decoder.\nRF block supports single-band (Band-III). It is • DAB(Eureka 147)/Korean DMB(TTAS.KO-07.0024 & TTAS.KO-07.0026) standard compliant receiver System-On-Chip\n• DAB OFDM demodulator and channel decoder• Supports all DAB functions and modes (I, II, III and IV) and automatic mode detection (AMD)\n• Full data rate of 1.8Mbit can be decoded\n• Automatic;

Mobile TV SoCs

Mobile TV applications- T-DMB, ISDB-T 1-seg/Full-seg, ISDB-Tsb, DABTotal cost effectiveness- RF tuner + demodulator one-chip SoC solutionHigh performancesLow power consumptionLow power supply voltageSmall IC size and PCB areaSupport various interfaceSpecial features for each standards;

Silicon MOS IC

Silicon MOS IC ■Features ●Output MOSFET with high breakdown voltage for voltage step-up, EL driver and CMOS control circuits are integrated into one chip. ●Oscillation circuit is incorporated ●EL voltage controlled push-pull drive system achieves higher EL light intensity. (160Vp-p

SCR?셲

Description Available either in sensitive (TS8) or standard (TN8 / TYN) gate triggering levels, the 8 A SCR series is suitable to fit all modes of control found in applications such as overvoltage crowbar protection, motor control circuits in power tools and kitchen aids, inrush current limiting

MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 ELEMENTS MINI MOLD

FEATURES • Low Noise, High Gain • Operable at Low Voltage • Small Feed-back Capacitance Cre = 0.3 pF TYP. • Built-in 2 Transistors (2 × 2SC4958)

MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 ELEMENTS MINI MOLD

FEATURES • Low Noise, High Gain • Operable at Low Voltage • Small Feed-back Capacitance Cre = 0.3 pF TYP. • Built-in 2 Transistors (2 × 2SC4958)

HIGH EFFICIENCY RECTIFIER (VOLTAGE RANGE 50 to 400 Volts CURRENT 8.0 Amperes)

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