NPN Epitaxial Planar Silicon Composite Transistor Switching Applications (with Bias Resistance)

Switching Applications (with Bias Resistance) Features • On-chip bias resistances (R1=10kΩ, R2=47kΩ)). • Composite type with 2 transistors contained in the CP package currently in use, improving the mounting efficiency greatly. • The FC134 is formed with two chips, being equivalent to the 2SC4

NPN Epitaxial Planar Silicon Composite Transistor Switching Applications (with Bias Resistance)

N-CHANNEL MOS BROADBAND RF POWER FET

The RF MOSFET Line RF Power Field-Effect Transistor N–Channel Enhancement–Mode . . . designed for wideband large–signal amplifier and oscillator applications up to 400 MHz range. • Guaranteed 28 Volt, 150 MHz Performance Output Power = 5.0 Watts Minimum Gain = 11 dB

Zener Diode, 1 Watt 짹5 Tolerance

Features: • Zener Voltage 110V to 200V • Low Cost • Low Zener Impedance • Excellent Clamping • Easily Cleaned with Freon, Alcohol, Chlorothene, and Similar Solvents

Zener Diode, 1 Watt 짹5 Tolerance

Features: • Zener Voltage 110V to 200V • Low Cost • Low Zener Impedance • Excellent Clamping • Easily Cleaned with Freon, Alcohol, Chlorothene, and Similar Solvents

3-Terminal Adjustable Current Sources

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3-Terminal Adjustable Current Sources

文件：273.64 Kbytes Page：14 Pages