丝印代码：107；NPN Epitaxial Planar Silicon Composite Transistor Switching Applications

Switching Applications Features • On-chip bias resistors (R1=47kΩ, R2=47kΩ) • Composite type with 2 transistors contained in the CP package currently in use, improving the mounting efficiency greatly. • The FC108 is formed with two chips, being equivalent to the 2SC3395, placed in one package.

200 VOLTS N-CHANNEL TMOS POWER FET LOGIC LEVEL

Logic Level TMOS N–Channel Enhancement Mode This TMOS FET is designed for high voltage, high speed switching applications such as line drivers, relay drivers, CMOS logic, microprocessor or TTL to high voltage interface and high voltage display drivers. • Low Drive Requirement, VGS = 3

HIGH EFFICIENCY RECTIFIERS(1.0A,600-1000V)

Switchmode Power Rectifiers . . . Designed for use in switching power supplies. These state-of-the-art devices have the fllowing features: * High Surge Capacity * Low Power Loss, High efficiency. * Glass Passivated chip junctions * 150°C Operating Junction Temperature * Low Stored Charge

Operational Amplifiers

文件：158.28 Kbytes Page：8 Pages

Operational Amplifiers

文件：158.28 Kbytes Page：8 Pages

Operational Amplifiers

文件：158.28 Kbytes Page：8 Pages