N-channel MOS-FET(500V, 0,38廓, 14A, 190W)

>Features - High Speed Switching - Low On-Resistance - No Secondary Breakdown - Low Driving Power - High Voltage - VGS= ± 30V Guarantee - Repetitive Avalanche Rated >Applications - Switching Regulators - UPS - DC-DC converters - General Purpose Power Amplifier

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 14A@ TC=25℃ ·Drain Source Voltage : VDSS= 500V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.38Ω(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-

Industrial 15/16 (24mm) diameter 1/2 watt composition variable resistor

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Supporting the Intel Celeron processor

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Ultra-Ripple, Long-life, Inverter Grade, Radial Leaded The Ultimate in Ripple for Plug-in

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