N-channel MOS-FET(500V, 0,38廓, 14A, 190W)

>Features - High Speed Switching - Low On-Resistance - No Secondary Breakdown - Low Driving Power - High Voltage - VGS= ± 30V Guarantee - Repetitive Avalanche Rated >Applications - Switching Regulators - UPS - DC-DC converters - General Purpose Power Amplifier

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 14A@ TC=25℃ ·Drain Source Voltage : VDSS= 500V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.38Ω(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-

N-channel MOS-FET

Industrial 15/16 (24mm) diameter 1/2 watt composition variable resistor

文件：65.84 Kbytes Page：2 Pages

Supporting the Intel Celeron processor

文件：1.3709 Mbytes Page：100 Pages

Celeron M Processor on 65 nm Process

文件：1.93023 Mbytes Page：71 Pages

HEADER STRIPS .100??Grid Solder Tail Double Row

文件：129.169 Kbytes Page：1 Pages

Ultra-Ripple, Long-life, Inverter Grade, Radial Leaded The Ultimate in Ripple for Plug-in

文件：270 Kbytes Page：4 Pages