Single 1A High-Speed, Low-Side Gate Driver

文件：1.16345 Mbytes Page：18 Pages

Single 1A High-Speed, Low-Side Gate Driver

文件：883.34 Kbytes Page：18 Pages

Single 1A High-Speed, Low-Side Gate Driver

文件：919.17 Kbytes Page：19 Pages

封装/外壳：SC-74A，SOT-753 包装：管件 描述：IC GATE DRVR LOW-SIDE SOT23-5 集成电路（IC） 栅极驱动器

Single-Channel, High-Speed, Low-side Gate Driver

Features « 4.510 18-V Single Supply Range « Outputs Held Low During VDD UVLO « TTL and CMOS Compatible Input-Logic Threshold « Input Design Output Held Low when Input Pins are Floating « Fast Rise and Fall Times (9ns and 7ns typical) « Fast Propagation Delays (13ns typical) «

MicroPower??Regulated Charge Pump

General Description The AAT3111 ChargePump™ is a MicroPower switched-capacitor voltage converter that delivers a regulated output. No external inductor is required for operation. Using three small capacitors, the AAT3111 can deliver up to 150mA to the voltage regulated output. The AAT3111 feature

NPN Epitaxial Silicon Transistor

Switching Application (Bias Resistor Built In) • Switching circuit, Inverter, Interface circuit, Driver Circuit • Built in bias Resistor (R=22KΩ) • Complement to FJV4111R

Vertical Driver LSI for Video Camera CCD Area Image Sensor

Overview The MN3111H is a vertical driver LSI for a two-dimensional interline CCD image sensor. It features a built-in power supply circuit that, in conjunction with such external components as four booster capacitors, six voltage stabilization capacitors, eight Schottky barrier diodes, and two Z

Vertical Driver LSI for Video Camera CCD Area Image Sensor

Overview The MN3111H is a vertical driver LSI for a two-dimensional interline CCD image sensor. It features a built-in power supply circuit that, in conjunction with such external components as four booster capacitors, six voltage stabilization capacitors, eight Schottky barrier diodes, and two Z

FET BIAS CONTROLLER WITH POLARISATION SWITCH AND TONE DETECTION

DEVICE DESCRIPTION The ZNBG series of devices are designed to meet the bias requirements of GaAs and HEMT FETs commonly used in satellite receiver LNBs, PMR cellular telephones etc. with a minimum of external components. FEATURES • Provides bias for GaAs and HEMT FETs • Drives up to three