NPN Epitaxial Silicon Transistor

Switching Application (Bias Resistor Built In) • Switching circuit, Inverter, Interface circuit, Driver Circuit • Built in bias Resistor (R=22KΩ) • Complement to FJV4111R

NPN Epitaxial Silicon Transistor

NPN Epitaxial Silicon Transistor

Switching Application (Bias Resistor Built In) • Switching circuit, Inverter, Interface circuit, Driver Circuit • Built in bias Resistor (R=22KΩ) • Complement to FJV4111R

封装/外壳：TO-236-3，SC-59，SOT-23-3 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：TRANS PREBIAS NPN 200MW SOT23-3 分立半导体产品 晶体管 - 双极（BJT）- 单，预偏置

MicroPower??Regulated Charge Pump

General Description The AAT3111 ChargePump™ is a MicroPower switched-capacitor voltage converter that delivers a regulated output. No external inductor is required for operation. Using three small capacitors, the AAT3111 can deliver up to 150mA to the voltage regulated output. The AAT3111 feature

Vertical Driver LSI for Video Camera CCD Area Image Sensor

Overview The MN3111H is a vertical driver LSI for a two-dimensional interline CCD image sensor. It features a built-in power supply circuit that, in conjunction with such external components as four booster capacitors, six voltage stabilization capacitors, eight Schottky barrier diodes, and two Z

Vertical Driver LSI for Video Camera CCD Area Image Sensor

Overview The MN3111H is a vertical driver LSI for a two-dimensional interline CCD image sensor. It features a built-in power supply circuit that, in conjunction with such external components as four booster capacitors, six voltage stabilization capacitors, eight Schottky barrier diodes, and two Z

FET BIAS CONTROLLER WITH POLARISATION SWITCH AND TONE DETECTION

DEVICE DESCRIPTION The ZNBG series of devices are designed to meet the bias requirements of GaAs and HEMT FETs commonly used in satellite receiver LNBs, PMR cellular telephones etc. with a minimum of external components. FEATURES • Provides bias for GaAs and HEMT FETs • Drives up to three