20 A 1200 V power Schottky silicon carbide diode

Features • AEC-Q101 qualified • No or negligible reverse recovery • Switching behavior independent of temperature • Robust high-voltage periphery • PPAP capable • Operating Tj from -40 °C to 175 °C • ECOPACK2 compliant Applications • OBC (On Board Battery chargers) • PHEV - EV charging s

Automotive 1200 V, 20 A, silicon carbide power Schottky diode

Features • AEC-Q101 qualified • No or negligible reverse recovery • Switching behavior independent of temperature • Robust high voltage periphery • PPAP capable • Operating Tj from -40 °C to 175 °C • D²PAK HV creepage distance (anode to cathode) = 5.38 mm min. • ECOPACK compliant

1200 V power Schottky silicon carbide diode

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No or negligible reverse recovery

文件：431.31 Kbytes Page：10 Pages

1200 V power Schottky silicon carbide diode

文件：436.58 Kbytes Page：8 Pages