1200 V power Schottky silicon carbide diode

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1200 V、20 A高浪涌碳化硅功率肖特基二极管

20 A 1200 V power Schottky silicon carbide diode

Features • AEC-Q101 qualified • No or negligible reverse recovery • Switching behavior independent of temperature • Robust high-voltage periphery • PPAP capable • Operating Tj from -40 °C to 175 °C • ECOPACK2 compliant Applications • OBC (On Board Battery chargers) • PHEV - EV charging s

Automotive 1200 V, 20 A, silicon carbide power Schottky diode

Features • AEC-Q101 qualified • No or negligible reverse recovery • Switching behavior independent of temperature • Robust high voltage periphery • PPAP capable • Operating Tj from -40 °C to 175 °C • D²PAK HV creepage distance (anode to cathode) = 5.38 mm min. • ECOPACK compliant

Automotive 1200 V, 20 A, silicon carbide power Schottky diode

Features • AEC-Q101 qualified • No or negligible reverse recovery • Switching behavior independent of temperature • Robust high voltage periphery • PPAP capable • Operating Tj from -40 °C to 175 °C • D²PAK HV creepage distance (anode to cathode) = 5.38 mm min. • ECOPACK compliant

Automotive 1200 V, 20 A, silicon carbide power Schottky diode

Features • AEC-Q101 qualified • No or negligible reverse recovery • Switching behavior independent of temperature • Robust high voltage periphery • PPAP capable • Operating Tj from -40 °C to 175 °C • D²PAK HV creepage distance (anode to cathode) = 5.38 mm min. • ECOPACK compliant

Automotive 1200 V, 20 A, silicon carbide power Schottky diode

Features • AEC-Q101 qualified • No or negligible reverse recovery • Switching behavior independent of temperature • Robust high voltage periphery • PPAP capable • Operating Tj from -40 °C to 175 °C • D²PAK HV creepage distance (anode to cathode) = 5.38 mm min. • ECOPACK compliant

Automotive 1200 V, 20 A, silicon carbide power Schottky diode

Features • AEC-Q101 qualified • No or negligible reverse recovery • Switching behavior independent of temperature • Robust high voltage periphery • PPAP capable • Operating Tj from -40 °C to 175 °C • D²PAK HV creepage distance (anode to cathode) = 5.38 mm min. • ECOPACK compliant

No or negligible reverse recovery

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封装/外壳：TO-247-3 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：AUTOMOTIVE SIC DIODES 分立半导体产品 二极管 - 整流器 - 阵列

20 A 1200 V 碳化硅功率肖特基二极管

1200 V power Schottky silicon carbide diode

文件：436.58 Kbytes Page：8 Pages

封装/外壳：TO-220-2 包装：管件 描述：DIODE SCHOTTKY 1.2KV 20A TO220AC 分立半导体产品 二极管 - 整流器 - 单

1200V, 20A, silicon carbide power Schottky Diode

1200 V, 20 A, silicon carbide power Schottky diode

文件：374.67 Kbytes Page：11 Pages

Robust high voltage periphery

文件：532.94 Kbytes Page：10 Pages