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P-CHANNEL POWER MOSFETs

FEATURES • Lower RDS(ON) • Improved inductive ruggedness • Fast switching times • Rugged polysilicon gate cell structure • Lower input capacitance • Extended safe operating area • Improved high tmeperature reliability

Samsung

三星

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220 package is universally preferred for all commercial-industrial applications at power dissipa

VishayVishay Siliconix

威世威世科技公司

POWER MOSFET

Description Third Generation HEXFETs International Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220 package is universally preferred for all commercial-industrial applications at power dissi

IRF

isc N-Channel MOSFET Transistor

文件:280.77 Kbytes Page:2 Pages

ISC

无锡固电

Power MOSFET

文件:277.52 Kbytes Page:9 Pages

VishayVishay Siliconix

威世威世科技公司

更新时间:2025-12-28 15:16:01
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
IR
24+
TO-220
18355
原装现货假一赔十
VISHAY(威世)
24+
TO-263-3
7828
支持大陆交货,美金交易。原装现货库存。
INFINEON
24+
TO-220
28000
原装现正品可看现货
IR(国际整流器)
24+
N/A
73048
原厂可订货,技术支持,直接渠道。可签保供合同
INFINEON/英飞凌
17+
TO-220
1174
原装现货
IR/VISHAY
25+
TO-220
45000
IR/VISHAY全新现货IRF9Z24NPBF即刻询购立享优惠#长期有排单订
IR
23+
TO-220
65400
INFINEON/IR
14+
1600
TO-263-3 (D2PAK)
IR
25+
TO-220
9600
百分百原装正品 真实公司现货库存 本公司只做原装 可
IR
15+
原厂原装
3750
进口原装现货假一赔十

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