高性能视频运算放大器

丝印代码：F8113；Power MOSFET

Benefits ● Very Low RDS(on) at 4.5V VGS ● Low Gate Charge ● Fully Characterized Avalanche Voltage and Current ● 100 Tested for RG Applications ● Synchronous MOSFET for Notebook Processor Power ● Synchronous Rectifier MOSFET for Isolated DC-DC Converters in Networking Systems

丝印代码：F8113；Synchronous MOSFET for Notebook Processor Power

文件：272.21 Kbytes Page：10 Pages

丝印代码：F8113；IRU3146 EVALUATION BOARD USER GUIDE

文件：1.7854 Mbytes Page：15 Pages

IF Filter for TV(PIFSIF)

Customer Name Standard specification Application IF Filter for TV(PIF+SIF) System M/N Picture Carrier Frequency 58.75 MHz FMD Part Number F811CPL

HIGH RELIABILITY FOR LOW COST

FEATURES - HIGH RELIABILITY FOR LOW COST - WIDE FREQUENCY RANGE - EXCELLENT ATTENUATION BEHAVIOUR

热套管

IF Filter for TV(PIF+SIF)

HIGH-FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 x 2SC4228 SMALL MINI MOLD

The µPA811T has built-in 2 low-voltage transistors which are designed to amplify low noise in the VHF band to the UHF band. FEATURES • Low Noise NF = 1.9 dB TYP. @ f = 2 GHz, VCE = 1 V, IC = 3 mA • High Gain |S21e|2 = 6.5 dB TYP. @ f = 2 GHz, VCE = 1 V, IC = 3 mA • A Small Mini Mold

HIGH-FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 x 2SC4228 SMALL MINI MOLD

The µPA811T has built-in 2 low-voltage transistors which are designed to amplify low noise in the VHF band to the UHF band. FEATURES • Low Noise NF = 1.9 dB TYP. @ f = 2 GHz, VCE = 1 V, IC = 3 mA • High Gain |S21e|2 = 6.5 dB TYP. @ f = 2 GHz, VCE = 1 V, IC = 3 mA • A Small Mini Mold

3-1/2 DIGIT A/D CONVERTER WITH HOLD AND DIFFERENTIAL REFERENCE INPUTS

文件：171.85 Kbytes Page：12 Pages

3-1/2 DIGIT A/D CONVERTER WITH HOLD AND DIFFERENTIAL REFERENCE INPUTS

文件：171.85 Kbytes Page：12 Pages

3-1/2 DIGIT A/D CONVERTER WITH HOLD AND DIFFERENTIAL REFERENCE INPUTS

文件：171.85 Kbytes Page：12 Pages