封装/外壳：20-WQFN 裸露焊盘 包装：托盘 描述：IC DPD MIXER BICMOS VFQFPN RF/IF，射频/中频和 RFID 射频混频器

封装/外壳：20-WQFN 裸露焊盘 包装：卷带（TR）带 描述：IC DPD MIXER BICMOS VFQFPN RF/IF，射频/中频和 RFID 射频混频器

1.5A, Low-Noise, 1MHz, Step-Up DC-DC Converter

General Description The MAX1763 is a high-efficiency, low-noise, step-up DC-DC converter intended for use in battery-powered wireless applications. This device maintains exceptionally low quiescent supply current (110µA) despite its high 1MHz operating frequency. Small external components and a t

1.5A, Low-Noise, 1MHz, Step-Up DC-DC Converter

General Description The MAX1763 is a high-efficiency, low-noise, step-up DC-DC converter intended for use in battery-powered wireless applications. This device maintains exceptionally low quiescent supply current (110µA) despite its high 1MHz operating frequency. Small external components and a t

1.5A, Low-Noise, 1MHz, Step-Up DC-DC Converter

General Description The MAX1763 is a high-efficiency, low-noise, step-up DC-DC converter intended for use in battery-powered wireless applications. This device maintains exceptionally low quiescent supply current (110µA) despite its high 1MHz operating frequency. Small external components and a t

SWITCHING DUAL N-CHANNEL POWER MOS FET INDUSTRIAL USE

DESCRIPTION The µPA1763 is N-Channel MOS Field Effect Transistor designed for DC/DC Converters. FEATURES • Dual chip type • Low on-resistance RDS(on)1 = 47.0 mΩ MAX. (VGS = 10 V, ID = 2.3 A) RDS(on)2 = 57.0 mΩ MAX. (VGS = 4.5 V, ID = 2.3 A) RDS(on)3 = 66.0 mΩ MAX. (

SWITCHING DUAL N-CHANNEL POWER MOS FET INDUSTRIAL USE

DESCRIPTION The µPA1763 is N-Channel MOS Field Effect Transistor designed for DC/DC Converters. FEATURES • Dual chip type • Low on-resistance RDS(on)1 = 47.0 mΩ MAX. (VGS = 10 V, ID = 2.3 A) RDS(on)2 = 57.0 mΩ MAX. (VGS = 4.5 V, ID = 2.3 A) RDS(on)3 = 66.0 mΩ MAX. (