Pushbutton Switches

文件：1.05991 Mbytes Page：9 Pages

包装：袋 描述：SWITCH CAP 开关 配件 - 帽盖

开关配件/盖帽

~35째 medium beam

文件：9.04055 Mbytes Page：6 Pages

~35째 medium beam. Clean appearance with no additional attachment interface

文件：6.04351 Mbytes Page：4 Pages

包装：散装 描述：REFLECTOR ROUND 1POS 110MM (D) 5 光电器件 光学 - 反射镜

~35째 medium beam compatible with BJB connectors

文件：6.26091 Mbytes Page：4 Pages

6 (65/34) AWG Bare Copper

文件：412.52 Kbytes Page：4 Pages

16 (65/34) AWG Bare Copper

文件：412.54 Kbytes Page：4 Pages

16 (65/34) AWG Bare Copper

文件：412.44 Kbytes Page：4 Pages

~35째 medium beam. Clean appearance with no additional attachment interface and compatible

文件：5.79425 Mbytes Page：4 Pages

16 (65/34) AWG Bare Copper

文件：412.97 Kbytes Page：4 Pages

16 (65/34) AWG Bare Copper

文件：412.95 Kbytes Page：4 Pages

16 (65/34) AWG Bare Copper

文件：412.89 Kbytes Page：4 Pages

16 (65/34) AWG Bare Copper

文件：413.29 Kbytes Page：4 Pages

16 (65/34) AWG Bare Copper

文件：413.25 Kbytes Page：4 Pages

16 (65/34) AWG Bare Copper

文件：413.21 Kbytes Page：4 Pages

MICROWAVE POWER GaAs FET

High-power GaAs FET (small signal gain stage) S to X BAND / 0.15W non - matched DESCRIPTION The MGF1601B, medium-power GaAs FET with an N-channel Schottky gate, is designed for use in S to X band amplifiers and oscillators. The hermetically sealed metalceramic package assures minimum parasitic

Silicon PNP(NPN) epitaxial planer transistor

Silicon PNP epitaxial planer transistor (Tr1) Silicon NPN epitaxial planer transistor (Tr2) For general amplification ■ Features ● Two elements incorporated into one package. (Emitter-coupled transistors) ● Reduction of the mounting area and assembly cost by one half.

PLLatinum??Low Cost Dual Frequency Synthesizer

文件：196.67 Kbytes Page：14 Pages

PLLatinum??Low Cost Dual Frequency Synthesizer

文件：196.67 Kbytes Page：14 Pages

PLLatinum??Low Cost Dual Frequency Synthesizer

文件：196.67 Kbytes Page：14 Pages