Miniature Based LED Lamps

文件：4.95484 Mbytes Page：28 Pages

GaAs 低噪声放大器

PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR?

General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others. Polyfet process features gold metal for greatly extended lifetime

Low-noise Dual IF VGA with FlatNoise™

The IDT F1241 IF VGA featuring FlatNoise™ technology improves system SNR, especially at lower gain settings. By keeping both IP3O & NF flat while gain is backed off, the system SNR is improved significantly under high level interferer conditions, especially when considering alias noise in an IF samp Ideal for systems with high SNR requirements\n20 dB typical Maximum Gain\n31 dB gain control range\n5 bit control\n1.0 dB Gain Steps\nExcellent Noise Figure ~ 4.0 dB\n5mm x 5mm 32 pin package\n200 ohm Differential Matched Input\n200 ohm Differential Matched Output\nNo termination resistor required\n;

Dual Channel IF Digital Variable Gain Amplifier 10MHz to 500MHz

文件：15.95623 Mbytes Page：35 Pages

Dual Channel IF Digital Variable Gain Amplifier 10MHz to 500MHz

文件：15.95623 Mbytes Page：35 Pages

Dual Channel IF Digital Variable Gain Amplifier 10MHz to 500MHz

文件：15.95623 Mbytes Page：35 Pages

包装：盒 描述：RF 开发板，套件，编程器 射频评估和开发套件，开发板

封装/外壳：32-WFQFN 裸露焊盘 包装：带 描述：IC RF AMP 50MHZ-400MHZ 32VFQFPN RF/IF，射频/中频和 RFID 射频放大器

Dual Channel IF Digital Variable Gain Amplifier 10MHz to 500MHz

文件：15.95623 Mbytes Page：35 Pages

Dual Channel IF Digital Variable Gain Amplifier 10MHz to 500MHz

文件：15.95623 Mbytes Page：35 Pages

Dual IF Digital Variable Gain Amplifier

文件：2.03302 Mbytes Page：21 Pages

Anti Vibration & Shock Resistance Lens Lineup

文件：13.26148 Mbytes Page：1 Pages

8-bit Microcontrollers

8-bit Microcontrollers

文件：1.55241 Mbytes Page：80 Pages

8-bit Microcontrollers

文件：1.55241 Mbytes Page：80 Pages

8-bit Microcontrollers

文件：1.55241 Mbytes Page：80 Pages

PNP SILICON BIAS RESISTOR TRANSISTOR

This new series of digital transistors is designed to replace a single device and its external resistor bias network. The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base–emitter resistor. The

NPN SILICON BIAS RESISTOR TRANSISTOR

Bias Resistor Transistor NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor Network This new series of digital transistors is designed to replace a single device and its external resistor bias network. The BRT (Bias Resistor Transistor) contains a single transistor with a monolit

Silicon NPN Transistor High Voltage Power Output

Description: The NTE124 is a general purpose transistor in a TO66 type package designed for high speed switch ing, linear amplifier applications, high voltage operational amplifiers, switching regulators, converters, inverters, deflection stages, and high fidelity amplifiers. Features:

PNP resistor-equipped transistor

DESCRIPTION PNP resistor-equipped transistor in a SC-59 plastic package. NPN complement: PDTC124EK. FEATURES • Built-in bias resistors R1 and R2 (typ. 22 kΩ each) • Simplification of circuit design • Reduces number of components and board space. APPLICATIONS • Especially suitable for space

丝印代码：-05；PNP resistor-equipped transistor

DESCRIPTION PNP resistor-equipped transistor in a SOT23 plastic package. NPN complement: PDTC124ET. FEATURES • Built-in bias resistors R1 and R2 (typ. 22 kΩ each) • Simplification of circuit design • Reduces number of components and board space. APPLICATIONS • Especially suitable for space